| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDC6506P is a dual P-Channel MOSFET array manufactured by On Semiconductor, configured as two independent P-Channel MOSFETs in a single SuperSOT-6 package.
This device features a drain-to-source voltage (Vdss) of 30V and a continuous drain current rating of 1.8A. The drain-source on-resistance is 170 mOhm maximum at Id=1.8A and Vgs=10V, with a logic-level gate threshold voltage of 3V maximum at Id=250µA. The gate charge is 3.5 nC maximum at Vgs=10V, and input capacitance is 190 pF maximum at Vds=15V.
The FDC6506P is designed for surface-mount assembly, offered in the SOT-23-6 Thin / TSOT-23-6 package with the supplier device package designated as SuperSOT-6. Power dissipation is rated at 700 mW, and the operating junction temperature range is -55°C to 150°C.
The maximum drain-to-source voltage (Vdss) is 30 V.
The continuous drain current is 1.8 A.
The maximum drain-source on-resistance is 170 mOhm at Id=1.8A and Vgs=10V.
The FDC6506P is available in a SOT-23-6 Thin, TSOT-23-6 package, with the supplier device package designated as SuperSOT-6, and is surface-mount.
The operating junction temperature range is -55°C to 150°C.
The device is marked as RoHS3 Compliant, but this is unverified and should be treated as low-confidence.
Yes, the FET feature is Logic Level Gate.