| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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53 pcs
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53 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
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The onsemi FDC645N is a PowerTrench series N-Channel MOSFET designed for various electronic applications. It offers a maximum drain-source voltage (Vds) of 30V and a maximum continuous drain current (Id) of 5.5A. The MOSFET has a low maximum drain-source resistance (Rds) of 48mΩ, contributing to efficient power handling. Its channel mode is enhancement, and it operates within a temperature range of -55°C to 150°C. The device is housed in a 6-pin SSOT surface-mount package, making it suitable for compact designs. Key electrical characteristics include a typical gate charge (Qg) of 13nC at Vgs=5V and a typical forward voltage (Vf) of 0.7V. The maximum power dissipation (Pd) is rated at 1.6W.
This MOSFET is designed for applications requiring reliable switching and power management. Its specifications make it suitable for use in power supplies, motor control, and other general-purpose switching applications where low on-resistance and moderate current handling are necessary. The surface-mount SSOT package facilitates integration into printed circuit boards, especially in space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 30V.
The maximum continuous drain current (Id) is 5.5A.
The maximum drain-source on-resistance (Rds) is 48mΩ.
The operating temperature range is -55°C to 150°C.
The FDC645N is available in a 6-pin SSOT surface-mount package.
The maximum power dissipation (Pd) is 1.6W.
The typical gate charge (Qg) is 13nC at Vgs=5V.