FDC645N N-Channel power MOSFET, 30V drain-source voltage, 5.5A drain current, 26mOhm on-resistance at 10V gate drive. Surface mount in a SuperSOT-6 package.
Mfr Part #:

FDC645N

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel power MOSFET, 30V drain-source voltage, 5.5A drain current, 26mOhm on-resistance at 10V gate drive. Surface mount in a SuperSOT-6 package.
✓ Total Stock: 2,963 pcs
$ Price Range: $0.25 - $1.19

FDC645N Available from 4 distributors

✓ Authorised
✓ Non-Authorised

FDC645N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDC645N Description

Short technical summary and product information.

The FDC645N is an N-Channel enhancement mode MOSFET from On Semiconductor, part of their PowerTrench series. It features a drain-to-source voltage rating of 30V and a continuous drain current rating of 5.5A at 25°C ambient temperature, making it suitable for low-voltage power management and load switching applications.

 

With a maximum drain-source on-resistance of just 26mOhm at 6.2A and 10V gate drive, this MOSFET offers low conduction losses. It supports gate drive voltages of 4.5V and 10V, providing design flexibility for both logic-level and standard gate drive circuits. The device includes a typical gate threshold voltage of 2V at 250µA drain current, ensuring reliable turn-on at lower gate voltages.

 

The FDC645N is housed in a thin SuperSOT-6 surface mount package (SOT-23-6 Thin / TSOT-23-6 compatible) designed for compact PCB layouts. It can dissipate up to 1.6W at 25°C ambient and operates across a junction temperature range of -55°C to 150°C. The part is RoHS3 compliant and REACH unaffected, meeting current environmental standards.

FDC645N Quick Information

Product Type: Single MOSFET Transistor
Canonical Name: FDC645N - N-Channel Power MOSFET, 30V, 5.5A, SuperSOT-6
Subcategory: Single MOSFETs

FDC645N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 Unlimited
REACH Status: REACH Unaffected

FDC645N Estimated Pricing

Qty Low High
1+ $1.19 $1.19
10+ $0.75 $0.75
50+ $0.55 $0.55
100+ $0.49 $0.49
500+ $0.38 $0.38
3,000+ $0.27 $0.27
6,000+ $0.25 $0.25

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDC645N Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • 5.5A continuous drain current rating.
  • Low on-resistance of 26mOhm at 10V.
  • SuperSOT-6 surface mount package.
  • Operating temperature range -55°C to 150°C.

FDC645N Applications

  • DC-DC converter power switching.
  • Load switch in portable devices.
  • Battery management circuits.
  • Low voltage motor control.

FDC645N FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of FDC645N?

30V maximum.

What is the continuous drain current?

5.5A at 25°C ambient temperature.

What is the package type?

SuperSOT-6 (SOT-23-6 Thin, TSOT-23-6).

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the FDC645N RoHS compliant?

RoHS3 compliant (unverified status).

What is the gate threshold voltage?

Maximum 2V at 250µA drain current.

What is the on-resistance?

26 mOhm maximum at 6.2A drain current and 10V gate-source voltage.

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