FDC642P-F085P P-Channel MOSFET from On Semiconductor in a TSOT-23-6 package. Rated for -20V drain-source voltage and -4A continuous drain current with 65mOhm max on-resistance.
Mfr Part #:

FDC642P-F085P

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
P-Channel MOSFET from On Semiconductor in a TSOT-23-6 package. Rated for -20V drain-source voltage and -4A continuous drain current with 65mOhm max on-resistance.
✓ Total Stock: 11,069 pcs

FDC642P-F085P Available from 3 distributors

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FDC642P-F085P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDC642P-F085P Description

Short technical summary and product information.

The FDC642P-F085P is a P-Channel PowerTrench MOSFET from On Semiconductor, designed for low-voltage, high-efficiency power management applications. It features a maximum drain-to-source voltage of -20V and continuous drain current of -4A (at Ta=25°C when Vgs=4.5V). The device achieves a typical on-resistance of 52.5 mOhm at Vgs=-4.5V and Id=-4A, enabling low conduction losses.

 

This MOSFET offers a low typical gate charge of 6.9 nC and fast switching speeds, making it well-suited for load switching and battery protection circuits. It is housed in a compact SUPERSOT-6 (TSOT-23-6) surface-mount package with a 1mm low profile, saving significant board space compared to standard SO-8 packages.

 

The FDC642P-F085P is AEC-Q101 qualified and PPAP capable, suitable for automotive applications. The device is RoHS compliant and Pb-Free.

FDC642P-F085P Quick Information

Product Type: P-Channel MOSFET
Series: FDC642P-F085
Canonical Name: FDC642P-F085P P-Channel MOSFET
Subcategory: P-Channel

FDC642P-F085P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

FDC642P-F085P Features

  • P-Channel PowerTrench MOSFET in TSOT-23-6 package.
  • Maximum drain-source voltage rating of -20V.
  • Continuous drain current of -4A at Vgs=-4.5V.
  • Typical on-resistance of 52.5mOhm at 4.5V drive.
  • AEC-Q101 qualified for automotive applications.

FDC642P-F085P Applications

  • Used in load switching and power management.
  • Ideal for battery protection circuits.
  • Suitable for automotive electronic modules.
  • Designed for low-voltage DC/DC converters.

FDC642P-F085P FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the FDC642P-F085P?

The maximum drain-source voltage (Vdss) is -20V.

What is the maximum continuous drain current?

The maximum continuous drain current is -4A at Ta=25°C when Vgs=-4.5V.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 65mOhm at Vgs=-4.5V and Id=-4A, with a typical value of 52.5mOhm.

What package does the FDC642P-F085P come in?

It is available in a TSOT-23-6 thin surface-mount package (SUPERSOT-6).

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Is the FDC642P-F085P RoHS compliant?

Yes, the device is Pb-Free and RoHS compliant.

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