FDC642P-F085 P-Channel MOSFET with -20V drain-source voltage and -4A continuous drain current. Features low on-resistance and fast switching in a compact SUPERSOT-6 package.
Mfr Part #:

FDC642P-F085

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
P-Channel MOSFET with -20V drain-source voltage and -4A continuous drain current. Features low on-resistance and fast switching in a compact SUPERSOT-6 package.
✓ Total Stock: 2,455 pcs
$ Price Range: $0.19

FDC642P-F085 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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FDC642P-F085 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDC642P-F085 Description

Short technical summary and product information.

The FDC642P-F085 is a P-Channel MOSFET from onsemi, designed for load switching, battery protection, and power management applications. It offers a drain-to-source voltage rating of -20V and a continuous drain current of -4A at VGS = -4.5V, with a pulsed drain current capability of -20A. The device features a typical on-resistance of 52.5mΩ at VGS = -4.5V and ID = -4A, and 75.3mΩ at VGS = -2.5V and ID = -3.2A, enabling efficient power handling.

 

This MOSFET utilizes high-performance Trench technology to achieve extremely low RDS(on) and fast switching speeds. It has a low total gate charge of 6.9nC typical, which reduces switching losses and improves efficiency in high-frequency circuits. The device operates over a junction temperature range of -55°C to 150°C and can dissipate up to 1.2W at 25°C ambient.

 

The FDC642P-F085 is housed in a SUPERSOT-6 package, which offers a small footprint (72% smaller than standard SO-8) and a low profile of 1mm thick, making it suitable for space-constrained designs. The package is Pb-free and RoHS compliant, and the device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.

 

With its compact size, low on-resistance, and fast switching characteristics, the FDC642P-F085 is well-suited for portable electronics, power management circuits, and automotive load switching applications.

FDC642P-F085 Quick Information

Product Type: MOSFET
Canonical Name: P-Channel MOSFET, -20V, -4A, SUPERSOT-6
Subcategory: Single MOSFET

FDC642P-F085 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1
REACH Status: Compliant
Lead Free: Yes

FDC642P-F085 Estimated Pricing

Qty Low High
2,455+ $0.19 $0.19

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDC642P-F085 Features

  • P-Channel MOSFET with -20V rating.
  • Continuous drain current of -4A.
  • Low typical on-resistance of 52.5mΩ.
  • Fast switching with low gate charge.
  • Compact SUPERSOT-6 package, Pb-free.

FDC642P-F085 Applications

  • Ideal for load switch applications.
  • Used in battery protection circuits.
  • Suitable for power management systems.

FDC642P-F085 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the FDC642P-F085?

The maximum drain-to-source voltage (VDSS) is -20V.

What is the continuous drain current rating?

The continuous drain current is -4A at TA = 25°C with VGS = 4.5V.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (junction temperature).

Is the FDC642P-F085 RoHS compliant?

Yes, the device is Pb-free and RoHS compliant.

What is the typical on-resistance at VGS = -4.5V?

The typical on-resistance is 52.5mΩ at VGS = -4.5V and ID = -4A.

What package is the FDC642P-F085 available in?

It is available in a SUPERSOT-6 package (6-lead TSOT23).

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