FDC642P P-Channel MOSFET with 20V drain-source breakdown voltage, 4A continuous drain current, and 65mΩ Rds(on) at 4.5V. Surface-mount package in SuperSOT-6.
Mfr Part #:

FDC642P

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
P-Channel MOSFET with 20V drain-source breakdown voltage, 4A continuous drain current, and 65mΩ Rds(on) at 4.5V. Surface-mount package in SuperSOT-6.
✓ Total Stock: 21,905 pcs
$ Price Range: $0.20 - $0.89

FDC642P Available from 4 distributors

✓ Authorised
✓ Non-Authorised

FDC642P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDC642P Description

Short technical summary and product information.

The FDC642P is a P-Channel power MOSFET from On Semiconductor, designed for low-voltage switching applications. It features a drain-source voltage (Vdss) of 20V and a continuous drain current of 4A at Ta=25°C. The device offers a low on-resistance of 65 mOhm maximum at Vgs=4.5V and Id=4A, enabling efficient power management. The gate threshold voltage is 1.5V maximum at 250µA, making it suitable for logic-level drive. Gate charge is 16 nC at 4.5V, and input capacitance is 925 pF at Vds=10V, indicating moderate switching speeds. The device is housed in a SuperSOT-6 surface-mount package (SOT-23-6 Thin, TSOT-23-6). It operates over a junction temperature range of -55°C to 150°C with a maximum power dissipation of 1.6W at Ta=25°C. This MOSFET is suitable for battery management, load switching, and DC-DC converter applications where low voltage and moderate current are required.

FDC642P Quick Information

Product Type: MOSFET
Canonical Name: P-Channel MOSFET, 20V, 4A, SuperSOT-6
Subcategory: Single MOSFET

FDC642P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDC642P Estimated Pricing

Qty Low High
1+ $0.89 $0.89
10+ $0.55 $0.55
50+ $0.41 $0.41
100+ $0.36 $0.36
500+ $0.27 $0.27
3,000+ $0.21 $0.21
6,000+ $0.20 $0.20

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDC642P Features

  • P-Channel MOSFET with 20V drain-source voltage.
  • Continuous drain current of 4A at ambient temperature.
  • Low on-resistance of 65 mOhm at 4.5V gate drive.
  • Logic-level gate threshold voltage of 1.5V.
  • Surface-mount SuperSOT-6 package.

FDC642P Applications

  • Used in battery management and protection circuits.
  • Suitable for load switching in portable devices.
  • Ideal for DC-DC converter power stages.
  • Applicable in power management for low-voltage systems.

FDC642P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage (Vdss) of the FDC642P?

The drain-source voltage is 20V.

What package is the FDC642P available in?

The FDC642P is available in a SuperSOT-6 surface-mount package (SOT-23-6 Thin, TSOT-23-6).

What is the operating temperature range of the FDC642P?

The operating junction temperature range is -55°C to 150°C.

Is the FDC642P RoHS compliant?

The part is listed as RoHS3 compliant, but this is unverified as no explicit RoHS statement was found in the datasheet.

What is the maximum continuous drain current of the FDC642P?

The maximum continuous drain current is 4A at Ta=25°C.

What is the gate threshold voltage (Vgs(th)) of the FDC642P?

The maximum gate threshold voltage is 1.5V at Id=250µA.

What is the on-resistance (Rds(on)) of the FDC642P?

The maximum on-resistance is 65 mOhm at Vgs=4.5V and Id=4A.

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