| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,020 pcs
|
10020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,718 pcs
|
1718 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,385 pcs
|
1385 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,385 pcs
|
1385 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,300 pcs
|
1300 pcs | On Request | 1 | On Request | On Request | 04+38 | On Request | On Request | |
|
152 pcs
|
152 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
36 pcs
|
36 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDC6420C is a dual N and P-Channel MOSFET array manufactured by ON Semiconductor using advanced POWERTRENCH technology. It integrates two complementary MOSFETs in a single SuperSOT-6 package, significantly reducing board space compared to separate SO-8 or TSSOP-8 devices.
Electrical specifications include a drain-source voltage rating of 20V for the N-Channel and -20V for the P-Channel. The N-Channel MOSFET supports a continuous drain current of 3A with a maximum on-resistance of 70 mOhm at 4.5V gate drive, and 95 mOhm at 2.5V. The P-Channel MOSFET supports -2.2A continuous drain current with a maximum on-resistance of 125 mOhm at -4.5V and 190 mOhm at -2.5V. Both channels feature logic-level gate thresholds, enabling direct drive from low-voltage logic sources.
The device is housed in a thin SuperSOT-6 package (TSOT-23-6), which offers a low 1mm profile and a small footprint suitable for space-constrained applications. Power dissipation is rated at 0.7W on a minimum copper pad, and up to 0.96W with an optimized 0.125 in² pad. The operating junction temperature range spans -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.07 | $1.07 |
| 10+ | $0.67 | $0.67 |
| 50+ | $0.49 | $0.49 |
| 100+ | $0.43 | $0.43 |
| 500+ | $0.34 | $0.34 |
| 3,000+ | $0.26 | $0.26 |
| 6,000+ | $0.24 | $0.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The N-Channel (Q1) has a drain-source voltage rating of 20V; the P-Channel (Q2) is rated at -20V.
The N-Channel supports 3A continuous drain current; the P-Channel supports 2.2A (absolute value).
The maximum drain-source on-resistance for the N-Channel at Vgs=4.5V and Id=3A is 70 mOhm.
The device is housed in a SOT-23-6 Thin (TSOT-23-6) package, also referred to as SuperSOT-6.
The operating junction temperature range is -55°C to 150°C.
RoHS3 compliance is indicated in the database but is listed as unverified. The datasheet marks this as a Pb-Free device.