FDC640P The FDC640P is a P-Channel PowerTrench MOSFET from onsemi with a maximum drain-source voltage of 20V and continuous drain current of 4.5A. It features a low on-resistance of 53 mΩ at 4.5V gate drive.
Mfr Part #:

FDC640P

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDC640P is a P-Channel PowerTrench MOSFET from onsemi with a maximum drain-source voltage of 20V and continuous drain current of 4.5A. It features a low on-resistance of 53 mΩ at 4.5V gate drive.
✓ Total Stock: 18,982 pcs
$ Price Range: $0.27 - $1.16

FDC640P Available from 5 distributors

✓ Authorised
✓ Non-Authorised

FDC640P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDC640P Description

Short technical summary and product information.

The FDC640P is a P-Channel enhancement-mode MOSFET built with onsemi's advanced PowerTrench process. It is designed for power management applications requiring efficient switching and low on-resistance.

 

Key electrical specifications include a maximum drain-to-source voltage (Vdss) of -20V, a continuous drain current of -4.5A at 25°C ambient, and a pulsed drain current rating of -20A. The device offers a maximum on-resistance of 53 mΩ at Vgs = -4.5V and Id = -4.5A, and 80 mΩ at Vgs = -2.5V and Id = -2.5A. The gate threshold voltage ranges from 0.6V to 1.5V. The rugged gate is rated for ±12V.

 

The device is housed in a compact SuperSOT-6 surface-mount package (TSOT-23-6 Thin), making it suitable for space-constrained designs. It is supplied in tape and reel packaging with a standard quantity of 3000 pieces per reel. The FDC640P is Pb-free and Halide free.

FDC640P Quick Information

Product Type: P-Channel MOSFET
Canonical Name: FDC640P P-Channel PowerTrench MOSFET
Subcategory: Single P-Channel

FDC640P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

FDC640P Estimated Pricing

Qty Low High
1+ $1.16 $1.16
10+ $0.73 $0.73
50+ $0.54 $0.54
100+ $0.48 $0.48
500+ $0.37 $0.37
3,000+ $0.29 $0.29
6,000+ $0.27 $0.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDC640P Features

  • P-Channel PowerTrench MOSFET for efficient switching.
  • Maximum drain-source voltage rating of 20V.
  • Continuous drain current of 4.5A at 25°C.
  • Low on-resistance of 53 mΩ at 4.5V gate drive.
  • Compact SuperSOT-6 surface-mount package.

FDC640P Applications

  • Ideal for battery management and protection circuits.
  • Suitable for load switch applications.
  • Used in portable electronic power management.

FDC640P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDC640P?

The maximum drain-source voltage (Vdss) is -20V.

What is the continuous drain current rating?

The continuous drain current is -4.5A at 25°C ambient temperature.

What is the on-resistance of the FDC640P?

The maximum on-resistance is 53 mΩ at Vgs = -4.5V and Id = -4.5A, and 80 mΩ at Vgs = -2.5V and Id = -2.5A.

What package does the FDC640P come in?

The FDC640P is available in a SuperSOT-6 surface-mount package (TSOT-23-6 Thin).

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Is the FDC640P RoHS compliant?

The FDC640P is listed as RoHS3 Compliant and is Pb-free and Halide free.

What is the gate threshold voltage?

The gate threshold voltage ranges from 0.6V (minimum) to 1.5V (maximum), with a typical value of 1.0V at Id = -250µA.

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