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FDC6401N The FDC6401N is a dual N-channel MOSFET from On Semiconductor. It features a 20V drain-source voltage, 3A continuous drain current, and low on-resistance of 70mΩ at 4.5V.
Mfr Part #:

FDC6401N

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDC6401N is a dual N-channel MOSFET from On Semiconductor. It features a 20V drain-source voltage, 3A continuous drain current, and low on-resistance of 70mΩ at 4.5V.
✓ Total Stock: 32,445 pcs
$ Price Range: $0.27 - $1.18

FDC6401N Available from 5 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDC6401N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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FDC6401N Description

Short technical summary and product information.

The FDC6401N is a dual N-channel MOSFET from On Semiconductor, designed for efficient DC/DC conversion and power management. It features a maximum drain-source voltage of 20V and continuous drain current of 3A, with pulsed current capability up to 12A. The device offers low on-resistance: 70mΩ maximum at VGS=4.5V and 95mΩ at VGS=2.5V, enabling low conduction losses. Gate charge is typically 4.6nC at 4.5V, and input capacitance is 324pF at VDS=10V, contributing to fast switching.

 

The MOSFET is housed in a compact SuperSOT-6 surface mount package (TSOT-23-6 thin), ideal for space-constrained designs. It is Pb-Free and Halide Free, and operates over a junction temperature range of -55°C to 150°C. Thermal resistance is 130°C/W junction-to-ambient. Typical applications include DC/DC converters, battery protection, and power management in portable electronics.

FDC6401N Quick Information

Product Type: Dual N-Channel MOSFET
Canonical Name: FDC6401N Dual N-Channel MOSFET
Subcategory: Dual N-Channel MOSFET

FDC6401N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 - Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDC6401N Estimated Pricing

Qty Low High
1+ $1.18 $1.18
10+ $0.74 $0.74
50+ $0.55 $0.55
100+ $0.48 $0.48
500+ $0.37 $0.37
3,000+ $0.29 $0.29
6,000+ $0.27 $0.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDC6401N Features

  • Dual N-channel MOSFET in SuperSOT-6 package.
  • Low on-resistance: 70mΩ at 4.5V.
  • High continuous drain current: 3A.
  • Low gate charge: 4.6nC typical.
  • Pb-Free and Halide Free device.

FDC6401N Applications

  • DC/DC converter efficiency improvement.
  • Battery protection circuits.
  • Power management in portable devices.
  • Synchronous and conventional PWM controllers.

FDC6401N FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDC6401N?

20 V.

What package does the FDC6401N come in?

SuperSOT-6 (TSOT-23-6 thin) surface mount package.

What is the operating temperature range of the FDC6401N?

-55°C to 150°C (junction).

Is the FDC6401N RoHS compliant?

Yes, it is RoHS3 compliant and Pb-Free.

What is the continuous drain current rating?

3 A.

What is the on-resistance at 4.5V gate drive?

70 mΩ maximum.

What is the gate threshold voltage range?

0.5 V to 1.5 V at ID=250 µA.

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