| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | 1530+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Lead Style | |
| Mounting Type | |
| SVHC Present | |
| Tape & Reel | |
| Tape Width |
The Fairchild FDC638P is a P-Channel MOSFET designed using Fairchild's advanced PowerTrench process. This process minimizes on-state resistance while maintaining low gate charge for efficient switching performance.
Key electrical specifications include a continuous drain current of -4.5A and a drain-source voltage of -20V. The on-resistance is specified as 48 mΩ at VGS = -4.5V. It also features a low gate charge of 10 nC typical.
This MOSFET is well-suited for battery-powered applications such as load switching, power management, battery charging circuits, and DC/DC conversion. It comes in a compact SuperSOT-6 package, offering a small footprint and low profile.
The operating temperature range is from -55°C to +150°C. The device is suitable for surface mount (SMD) applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is -20V.
It uses a SuperSOT-6 surface mount package.
The operating and storage junction temperature range is -55 to +150 degrees Celsius.
The typical static drain-source on-resistance is 48 milliohms at a gate-source voltage of -4.5V.
The total gate charge is typically 10 nanocoulombs.
The standard package quantity is 3000 units per 7-inch reel.