| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
16,020 pcs
|
16020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
860 pcs
|
860 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
857 pcs
|
857 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDC638P is a P-Channel enhancement-mode MOSFET manufactured by On Semiconductor using the advanced POWERTRENCH process. This process is specifically tailored to minimize on-state resistance while maintaining low gate charge for superior switching performance. The device is rated for a maximum drain-source voltage of -20V and a continuous drain current of -4.5A at 25°C ambient temperature.
Key electrical characteristics include a maximum on-resistance of 48mΩ at VGS = -4.5V and ID = -4.5A, with a typical value of 39mΩ. At lower gate drive of -2.5V, the typical on-resistance is 65mΩ. The gate threshold voltage ranges from 0.4V to 1.5V with a typical value of 0.8V, making it suitable for low-voltage drive applications. The device features a low typical gate charge of 10nC, enabling efficient high-frequency switching.
The FDC638P is well suited for battery-powered applications including load switching, power management, battery charging circuits, and DC/DC conversion. The SuperSOT-6 package offers a small footprint that is 72% smaller than a standard SO-8 package, with a low profile of only 1mm thickness, making it ideal for space-constrained designs.
The device is Pb-Free, Halide Free, and RoHS compliant. It operates over a junction temperature range of -55°C to +150°C and has a maximum power dissipation of 1.6W at 25°C ambient. Thermal resistance is 78°C/W junction-to-ambient and 30°C/W junction-to-case.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.13 | $1.13 |
| 10+ | $0.71 | $0.71 |
| 50+ | $0.52 | $0.52 |
| 100+ | $0.46 | $0.46 |
| 500+ | $0.36 | $0.36 |
| 3,000+ | $0.28 | $0.28 |
| 6,000+ | $0.26 | $0.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FDC638P has a maximum drain-source voltage (VDSS) of -20V.
The FDC638P can handle a continuous drain current of -4.5A at 25°C ambient temperature, with a pulsed drain current rating of -20A.
The maximum on-resistance is 48mΩ at VGS=-4.5V and ID=-4.5A, with a typical value of 39mΩ. At VGS=-2.5V, the typical on-resistance is 65mΩ.
The FDC638P operates over a junction temperature range of -55°C to +150°C.
The FDC638P is available in a SOT-23-6 Thin (TSOT-23-6) surface-mount package, also known as SuperSOT-6.
Yes, the FDC638P is RoHS3 compliant, Pb-Free, and Halide Free as verified in the datasheet.
The gate threshold voltage ranges from 0.4V minimum to 1.5V maximum, with a typical value of 0.8V at VDS=VGS and ID=-250µA.