FDC637BNZ The FDC637BNZ is an N-Channel MOSFET from ON Semiconductor rated for 20V drain-source voltage and 6.2A continuous drain current. It is offered in a surface-mount SuperSOT-6 package.
Mfr Part #:

FDC637BNZ

Available from 8 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDC637BNZ is an N-Channel MOSFET from ON Semiconductor rated for 20V drain-source voltage and 6.2A continuous drain current. It is offered in a surface-mount SuperSOT-6 package.
✓ Total Stock: 480,413 pcs
$ Price Range: $0.14 - $0.75

FDC637BNZ Available from 8 distributors

✓ Authorised
✓ Non-Authorised

FDC637BNZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDC637BNZ Description

Short technical summary and product information.

The FDC637BNZ is a surface-mount N-Channel MOSFET manufactured by ON Semiconductor. It is rated for a drain-to-source voltage of 20V and a continuous drain current of 6.2A at ambient temperature.

 

The device features a maximum on-resistance of 24mΩ at Vgs=4.5V and Id=6.2A, a maximum gate threshold voltage of 1.5V, and a maximum gate charge of 12nC at Vgs=4.5V. Input capacitance is 895pF at Vds=10V, and the gate-source voltage range is ±12V.

 

Maximum power dissipation is 1.6W at ambient temperature, with an operating junction temperature range of -55°C to 150°C. The FDC637BNZ is housed in a SOT-23-6 Thin/TSOT-23-6 package using the SuperSOT-6 supplier device package, making it suitable for space-constrained PCB layouts.

 

With its low on-resistance and gate charge, the FDC637BNZ is appropriate for low-voltage switching circuits and power management functions.

FDC637BNZ Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET (20V, 6.2A)
Subcategory: Single MOSFET

FDC637BNZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

FDC637BNZ Estimated Pricing

Qty Low High
1+ $0.75 $0.75
10+ $0.46 $0.46
50+ $0.34 $0.34
100+ $0.30 $0.30
500+ $0.23 $0.23
3,000+ $0.16 $0.16
6,000+ $0.14 $0.14

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDC637BNZ Features

  • Features 20V drain-source voltage rating.
  • Supports 6.2A continuous drain current.
  • Provides 24mΩ on-resistance at 4.5V.
  • Has 12nC gate charge for switching.
  • Uses compact SuperSOT-6 surface-mount package.

FDC637BNZ Applications

  • Suitable for low-side load switching.
  • Common in power management circuits.
  • Works well in DC-DC converter stages.
  • Good for portable device power control.

FDC637BNZ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDC637BNZ?

The drain-source voltage rating is 20V.

What is the maximum continuous drain current?

The maximum continuous drain current is 6.2A at ambient temperature (Ta).

What is the maximum on-resistance?

The maximum on-resistance is 24mΩ at a drain current of 6.2A and gate-source voltage of 4.5V.

What is the gate charge of this device?

The maximum gate charge is 12nC at Vgs=4.5V.

Which package is the FDC637BNZ available in?

It comes in a SOT-23-6 Thin/TSOT-23-6 package, with a SuperSOT-6 supplier device package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FDC637BNZ RoHS compliant?

According to the existing database record, the FDC637BNZ is RoHS3 Compliant.

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