FDC637AN The FDC637AN is an N-Channel MOSFET from onsemi rated for 20V drain-source voltage and 6.2A continuous drain current. It features 24mΩ maximum Rds(on) at 4.5V gate drive and comes in a SuperSOT-6 surface-mount package.
Mfr Part #:

FDC637AN

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDC637AN is an N-Channel MOSFET from onsemi rated for 20V drain-source voltage and 6.2A continuous drain current. It features 24mΩ maximum Rds(on) at 4.5V gate drive and comes in a SuperSOT-6 surface-mount package.
✓ Total Stock: 40,671 pcs
$ Price Range: $0.26 - $1.23

FDC637AN Available from 5 distributors

✓ Authorised
✓ Non-Authorised

FDC637AN Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDC637AN Description

Short technical summary and product information.

FDC637AN is a single N-Channel MOSFET from onsemi, built with the POWERTRENCH process. It is rated for a maximum drain-source voltage of 20 V and a continuous drain current of 6.2 A at 25°C ambient. The device is specified with gate drive voltages of 2.5 V and 4.5 V, enabling operation in low-voltage applications.

 

Key electrical characteristics include a maximum drain-source on-resistance of 24 mΩ at VGS = 4.5 V and 32 mΩ at VGS = 2.5 V. Gate threshold voltage ranges from 0.4 V to 1.5 V with a typical value of 0.82 V. Total gate charge is 10.5 nC typical and 16 nC maximum at VGS = 4.5 V. Input capacitance is 1125 pF maximum at VDS = 10 V.

 

The low gate charge and fast switching speed make the device suitable for DC/DC converters, load switches, and battery protection circuits. Maximum power dissipation is 1.6 W for single operation (Note 1a), with a thermal resistance of 78 °C/W junction-to-ambient and 30 °C/W junction-to-case.

 

The FDC637AN is housed in a SOT-23-6 Thin / TSOT-23-6 package, also known as SuperSOT-6. It is a surface-mount device with a low-profile 1 mm thickness and occupies 72% less board area than a standard SO-8 package. Operating junction temperature range is -55°C to +150°C.

FDC637AN Quick Information

Product Type: MOSFET
Series: POWERTRENCH
Canonical Name: N-Channel MOSFET, 20V, 6.2A, SuperSOT-6
Subcategory: Single MOSFET

FDC637AN Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FDC637AN Estimated Pricing

Qty Low High
1+ $1.23 $1.23
10+ $0.77 $0.77
50+ $0.57 $0.57
100+ $0.51 $0.51
500+ $0.39 $0.39
3,000+ $0.28 $0.28
6,000+ $0.26 $0.26

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDC637AN Features

  • Maximum drain-source voltage of 20V.
  • Continuous drain current of 6.2A.
  • 24 mΩ on-resistance at 4.5V.
  • Low gate charge of 10.5nC.
  • Offered in SuperSOT-6 surface-mount package.

FDC637AN Applications

  • Used in DC/DC converter circuits.
  • Suitable for load switching applications.
  • Battery protection in portable devices.

FDC637AN FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDC637AN?

20 V

What package is the FDC637AN available in?

SOT-23-6 Thin, TSOT-23-6; supplier device package SuperSOT-6.

What is the operating junction temperature range?

-55°C to +150°C

Is the FDC637AN RoHS compliant?

Yes, the datasheet states the device is Pb-Free, Halide Free, and RoHS Compliant.

What is the continuous drain current rating?

6.2 A at Ta = 25°C

What is the maximum on-resistance at VGS = 4.5 V?

24 mΩ at Id = 6.2 A

What is the gate threshold voltage range?

0.4 V to 1.5 V, typical 0.82 V

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