| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
258,000 pcs
|
258000 pcs | On Request | 1 | On Request | On Request | 0429+ | On Request | On Request | |
|
9,000 pcs
|
9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
7,020 pcs
|
7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
965 pcs
|
965 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDC634P is a P-Channel enhancement-mode MOSFET manufactured by On Semiconductor using the POWERTRENCH process. It is designed for low voltage battery power management and load switch applications. The device is rated for a maximum drain-source voltage of -20V and a continuous drain current of -3.5A. On-resistance is specified at 80mΩ maximum with Vgs=-4.5V and -3.5A drain current, and 110mΩ maximum at Vgs=-2.5V and -3.1A. Gate threshold voltage ranges from -0.4V to -1.5V. Typical gate charge is 7.2nC, and input capacitance is 779pF, enabling efficient switching. The device is housed in a compact SuperSOT-6 (TSOT-23-6) surface mount package, which is suitable for space-constrained designs. Maximum power dissipation is 1.6W (note 1a) with junction-to-ambient thermal resistance of 78°C/W. The operating junction temperature range is -55°C to 150°C. The FDC634P is supplied in tape and reel packaging with 3000 units per reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.11 | $1.11 |
| 10+ | $0.69 | $0.69 |
| 50+ | $0.51 | $0.51 |
| 100+ | $0.45 | $0.45 |
| 500+ | $0.35 | $0.35 |
| 3,000+ | $0.27 | $0.27 |
| 6,000+ | $0.25 | $0.25 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is -20V.
The device is available in SOT-23-6 Thin (TSOT-23-6) and SuperSOT-6 surface mount packages.
The operating junction temperature range is -55°C to 150°C.
Yes, the device is listed as RoHS3 Compliant (unverified).
The on-resistance is 80mΩ max at Vgs=-4.5V, Id=-3.5A, and 110mΩ max at Vgs=-2.5V, Id=-3.1A.
The typical gate charge (Qg) is 7.2 nC at Vgs=4.5V.