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FDC633N N-Channel enhancement mode power MOSFET with 30V drain-source breakdown voltage and 5.2A continuous drain current. Surface mount SuperSOT-6 package.
Mfr Part #:

FDC633N

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel enhancement mode power MOSFET with 30V drain-source breakdown voltage and 5.2A continuous drain current. Surface mount SuperSOT-6 package.
✓ Total Stock: 2,163 pcs

FDC633N Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
2,050 pcs
On Request
2050 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
113 pcs
On Request
113 pcs On Request 1 On Request On Request 13+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDC633N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDC633N Description

Short technical summary and product information.

The FDC633N is an N-Channel enhancement mode power MOSFET manufactured using a high cell density DMOS process. It features a drain-source breakdown voltage of 30V and can handle a continuous drain current of 5.2A at 25°C ambient. The pulsed drain current rating is 16A.

 

On-resistance is typically 33mOhm and maximum 42mOhm at VGS = 4.5V and ID = 5.2A. At 2.5V drive, typical on-resistance rises to 43mOhm, maximum 54mOhm at ID = 4.5A. Gate threshold voltage ranges from 0.4V typical to 1V maximum. Maximum gate-source voltage is ±8V.

 

The device is housed in a SuperSOT-6 surface mount package and is rated for operation from -55°C to 150°C junction temperature. Thermal resistance junction-to-ambient is 78°C/W typical, junction-to-case is 30°C/W. Maximum power dissipation is 1.6W at 25°C ambient.

FDC633N Quick Information

Product Type: MOSFET
Canonical Name: FDC633N N-Channel Enhancement Mode Power MOSFET
Subcategory: Single MOSFET

FDC633N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDC633N Features

  • 5.2A continuous drain current at 25°C.
  • 30V drain-source breakdown voltage minimum.
  • 42mOhm maximum on-resistance at 4.5V drive.
  • Surface mount SuperSOT-6 package.
  • Operating temperature range -55°C to 150°C.

FDC633N Applications

  • Suitable for notebook computer power circuits.
  • Use in portable phone battery management.
  • Ideal for PCMCIA card power switching.
  • Low voltage DC-DC converter designs.

FDC633N FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the FDC633N?

The drain-source breakdown voltage is 30V minimum at VGS = 0V, ID = 250µA.

What is the continuous drain current rating?

The continuous drain current is 5.2A maximum at Ta = 25°C.

What package is the FDC633N available in?

It is available in a thin SOT-23-6 / TSOT-23-6 surface mount package, also known as SuperSOT-6.

What is the on-resistance at 4.5V gate drive?

The maximum on-resistance is 42mOhm at VGS = 4.5V, ID = 5.2A. Typical is 33mOhm.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FDC633N RoHS compliant?

RoHS3 compliant status is indicated but unverified.

What is the maximum power dissipation?

Maximum power dissipation is 1.6W at Ta = 25°C.

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