| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,930 pcs
|
3930 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,436 pcs
|
3436 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 08+36 | On Request | On Request | |
|
2,180 pcs
|
2180 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
19 pcs
|
19 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request | |
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs(th) (Max) @ Id |
The FDC6333C is a dual MOSFET array from onsemi, integrating one N-channel (Q1) and one P-channel (Q2) PowerTrench MOSFET in a single compact SuperSOT-6 package. It is designed for applications requiring efficient power switching in a small footprint, such as DC-DC converters, load switches, and LCD display inverters.
The N-channel MOSFET is rated for a maximum drain-source voltage of 30 V and a continuous drain current of 2.5 A (8 A pulsed). The P-channel MOSFET is rated for -30 V and -2.0 A continuous (8 A pulsed). On-resistance is minimized with Q1 achieving 95 mΩ maximum at VGS=10 V (150 mΩ at 4.5 V), and Q2 achieving 130 mΩ at VGS=-10 V (220 mΩ at -4.5 V). The device also features logic-level gate drive with a maximum gate charge of 6.6 nC at 10 V.
The SuperSOT-6 package (TSOT-23-6) has a low profile of 1 mm and is 72% smaller than an SO-8, making it ideal for space-constrained designs. The junction temperature range is -55°C to +150°C, and the device is Pb-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.95 | $0.95 |
| 10+ | $0.59 | $0.59 |
| 50+ | $0.44 | $0.44 |
| 100+ | $0.38 | $0.38 |
| 500+ | $0.29 | $0.29 |
| 3,000+ | $0.23 | $0.23 |
| 6,000+ | $0.21 | $0.21 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The N-channel MOSFET (Q1) is rated up to 30 V, and the P-channel MOSFET (Q2) is rated down to -30 V.
Q1 (N-channel) handles 2.5 A continuous, and Q2 (P-channel) handles -2.0 A continuous; pulsed drain current is 8 A for both.
-55°C to +150°C (junction temperature).
It is available in a thin SOT-23-6 (TSOT-23-6) package, also known as SuperSOT-6, with surface-mount gull-wing leads.
The part is listed as RoHS3 compliant in the existing database and is described as a Pb-Free device in the datasheet. Note: RoHS status in the database is unverified.
Q1 (N-channel) has maximum RDS(on) of 95 mΩ at VGS=10V and 150 mΩ at VGS=4.5V; Q2 (P-channel) has 130 mΩ at VGS=-10V and 220 mΩ at VGS=-4.5V.
Maximum total gate charge is 6.6 nC at VGS=10V.