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FDC6327C N and P-Channel MOSFET array from On Semiconductor. Rated for 20V drain-source voltage, 2.7A continuous drain current (N-channel), with 80 mOhm max on-resistance at 4.5V and logic level gate drive.
Mfr Part #:

FDC6327C

Available from 6 distributors
Mfr Name: On Semiconductor
On Semiconductor
N and P-Channel MOSFET array from On Semiconductor. Rated for 20V drain-source voltage, 2.7A continuous drain current (N-channel), with 80 mOhm max on-resistance at 4.5V and logic level gate drive.
✓ Total Stock: 30,476 pcs
$ Price Range: $0.33 - $1.37

FDC6327C Available from 6 distributors

✓ Authorised
✓ Non-Authorised
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDC6327C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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FDC6327C Description

Short technical summary and product information.

The FDC6327C is a dual N and P-Channel MOSFET array from On Semiconductor, designed using the advanced POWERTRENCH process for low on-state resistance and fast switching performance. The N-channel MOSFET is rated for 20V drain-source voltage with a continuous drain current of 2.7A and a maximum on-resistance of 80 mOhm at 4.5V gate drive. The P-channel MOSFET is rated for -20V, -1.9A continuous drain current, and 170 mOhm maximum on-resistance at -4.5V.

 

This device features a logic level gate threshold voltage maximum of 1.5V at 250µA, allowing direct drive from low-voltage logic. It offers low gate charge of 4.5 nC and low input capacitance of 325 pF, contributing to efficient high-speed switching. The MOSFET is housed in a compact SuperSOT-6 package (TSOT-23-6 thin), which provides a small footprint and low 1 mm profile, making it suitable for space-constrained designs.

 

The FDC6327C is mounted via surface mount technology and is supplied on tape and reel with 3000 pieces per reel. The device is Pb-Free (lead-free) as per the datasheet, and is suitable for applications such as DC/DC converters, load switching, and motor driving. The operating junction temperature range is -55°C to 150°C, with a maximum power dissipation of 700 mW.

FDC6327C Quick Information

Product Type: MOSFET (Metal Oxide)
Canonical Name: FDC6327C On Semiconductor N and P-Channel MOSFET
Subcategory: N and P-Channel MOSFETs

FDC6327C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FDC6327C Estimated Pricing

Qty Low High
1+ $1.37 $1.37
10+ $0.86 $0.86
50+ $0.64 $0.64
100+ $0.57 $0.57
500+ $0.44 $0.44
3,000+ $0.35 $0.35
6,000+ $0.33 $0.33

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDC6327C Features

  • Dual N and P-Channel MOSFET array.
  • 20V drain-source rating for both channels.
  • Low on-resistance: 80 mOhm N-channel.
  • Logic level gate drive threshold.
  • Surface mount SuperSOT-6 package.

FDC6327C Applications

  • Used in DC/DC converter circuits.
  • Ideal for load switching applications.
  • Suitable for motor driving circuits.

FDC6327C FAQs

2 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDC6327C?

The N-channel is rated for 20V, and the P-channel is rated for -20V.

What is the maximum drain current for the FDC6327C?

The N-channel continuous drain current is 2.7A, and the P-channel is -1.9A.

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