FDC6321C The FDC6321C is a dual N & P-channel logic level enhancement mode MOSFET from On Semiconductor. It features 25V drain-source voltage, 0.68A N-channel and 0.46A P-channel continuous drain current, and is available in a SOT-23-6 Thin package.
Mfr Part #:

FDC6321C

Available from 7 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDC6321C is a dual N & P-channel logic level enhancement mode MOSFET from On Semiconductor. It features 25V drain-source voltage, 0.68A N-channel and 0.46A P-channel continuous drain current, and is available in a SOT-23-6 Thin package.
✓ Total Stock: 83,823 pcs
$ Price Range: $0.23 - $1.02

FDC6321C Available from 7 distributors

✓ Authorised
✓ Non-Authorised

FDC6321C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

FDC6321C Description

Short technical summary and product information.

The FDC6321C is a dual N and P-Channel logic level enhancement mode field effect transistor from On Semiconductor. It is designed for low voltage applications and can replace multiple digital transistors in load switching circuits. The device features a gate-source zener for ESD ruggedness exceeding 6 kV (Human Body Model) and very low gate threshold voltage (1.5V max) allowing direct operation from 3V logic.

 

Key electrical specifications include a drain-source voltage rating of 25V for the N-Channel and -25V for the P-Channel, continuous drain current of 0.68A (N-Channel) and -0.46A (P-Channel), and maximum on-resistance of 450 mΩ (N-Channel at 4.5V) and 1.1 Ω (P-Channel at -4.5V). The device also features low gate charge (2.3 nC max) and input capacitance (50 pF max).

 

The FDC6321C is offered in a Pb-free, surface mount SuperSOT-6 package (also available as SOT-23-6 Thin or TSOT-23-6). It is supplied in tape and reel packaging with a standard quantity of 3000 pieces per reel. The operating junction temperature range is -55°C to 150°C.

FDC6321C Quick Information

Product Type: MOSFET Array
Canonical Name: Dual N & P-Channel Logic Level Enhancement Mode MOSFET
Subcategory: Dual N & P-Channel MOSFET

FDC6321C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

FDC6321C Estimated Pricing

Qty Low High
1+ $1.02 $1.02
10+ $0.63 $0.63
50+ $0.47 $0.47
100+ $0.41 $0.41
500+ $0.32 $0.32
3,000+ $0.25 $0.25
6,000+ $0.23 $0.23

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDC6321C Features

  • Dual N and P-Channel configuration.
  • Logic level gate for 3V operation.
  • Gate-source zener for ESD ruggedness >6kV.
  • Low on-resistance: 450mΩ N-Channel.
  • Pb-free package.

FDC6321C Applications

  • Load switching applications.
  • Replacement for digital transistors.
  • Low voltage battery-powered circuits.
  • Portable electronics.

FDC6321C FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

25V for N-Channel, -25V for P-Channel.

What package options are available?

SOT-23-6 Thin, TSOT-23-6, and SuperSOT-6.

What is the operating temperature range?

-55°C to 150°C (junction).

Is this device RoHS compliant?

RoHS3 Compliant (unverified) and Pb-Free (verified).

What is the gate threshold voltage?

Maximum 1.5V at Id=250µA.

What is the ESD rating?

Greater than 6 kV (Human Body Model).

What is the continuous drain current rating?

0.68A for N-Channel, -0.46A for P-Channel.

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