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FDC6320C The FDC6320C is a 25V N and P-Channel MOSFET array from On Semiconductor. It features a logic level gate, 220mA N-Channel and 120mA P-Channel drain current, 4 Ohm max on-resistance, and 0.4nC gate charge.
Mfr Part #:

FDC6320C

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDC6320C is a 25V N and P-Channel MOSFET array from On Semiconductor. It features a logic level gate, 220mA N-Channel and 120mA P-Channel drain current, 4 Ohm max on-resistance, and 0.4nC gate charge.
Total Stock: 368 pcs
$ Price Range: $0.33

FDC6320C Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
368 pcs
368 pcs On Request 1 On Request On Request On Request On Request On Request

FDC6320C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

FDC6320C Description

Short technical summary and product information.

The FDC6320C is a small signal MOSFET array from On Semiconductor, integrating both N-Channel and P-Channel enhancement-mode transistors in a single package. It is designed for surface mount applications requiring complementary switching.

 

Key electrical specifications include a maximum drain to source voltage of 25V, drain current of 220mA for the N-Channel and 120mA for the P-Channel, and a maximum on-resistance of 4 Ohms at 4.5V gate drive. The device features a logic level gate, enabling direct drive from low voltage logic circuits. Gate charge is 0.4nC and input capacitance is 9.5pF, supporting efficient high-frequency operation.

 

The FDC6320C is housed in a SOT-23-6 Thin, TSOT-23-6 package with a SuperSOT-6 supplier device package. It is surface mountable and operates over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 700mW.

FDC6320C Quick Information

Product Type: MOSFET Array
Canonical Name: FDC6320C
Subcategory: N and P-Channel

FDC6320C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDC6320C Estimated Pricing

Qty Low High
898+ $0.33 $0.33

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDC6320C Features

  • 25V drain to source voltage rating.
  • 220mA N-Channel and 120mA P-Channel current.
  • 4 Ohm maximum on-resistance at 4.5V.
  • Logic level gate for 4.5V drive.
  • Surface mount SOT-23-6 package.

FDC6320C Applications

  • Used in low-power switching circuits.
  • Suitable for signal routing applications.
  • Ideal for battery-powered portable devices.

FDC6320C FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain to source voltage of the FDC6320C?

The maximum drain to source voltage (Vdss) is 25V.

What is the drain current rating for the N-Channel and P-Channel?

The N-Channel drain current is 220mA and the P-Channel drain current is 120mA.

What is the on-resistance of the FDC6320C?

The maximum on-resistance (Rds on) is 4 Ohms at Id = 400mA and Vgs = 4.5V.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package does the FDC6320C come in?

The FDC6320C is available in a SOT-23-6 Thin, TSOT-23-6 package with a SuperSOT-6 supplier device package.

Is the FDC6320C RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified and has low confidence.

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