| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
43,961 pcs
|
43961 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,080 pcs
|
2080 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
720 pcs
|
720 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
575 pcs
|
575 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
306 pcs
|
306 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
285 pcs
|
285 pcs | On Request | 1 | On Request | On Request | 04+31 | On Request | On Request | |
|
47 pcs
|
47 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDC6306P is a dual P-Channel enhancement-mode MOSFET manufactured by On Semiconductor using the advanced PowerTrench process. This device integrates two independent P-Channel MOSFETs in a single SuperSOT-6 package, designed for space-constrained applications. It is rated for a maximum drain-source voltage of -20V and a continuous drain current of -1.9A. The MOSFET features a logic-level gate, enabling operation at 2.5V gate drive, with a maximum on-resistance of 170mOhm at Vgs=-4.5V and 250mOhm at Vgs=-2.5V.
The device exhibits low gate charge (typical 3nC, max 4.2nC at Vgs=4.5V) and low input capacitance (441pF at Vds=10V), which contribute to fast switching performance. The operating junction temperature range is -55°C to 150°C, with a maximum power dissipation of 0.96W (Note 1a) for single operation. The package is surface-mount SuperSOT-6 (TSOT-23-6 thin) with a small footprint, 72% smaller than standard SO-8, and a low profile of 1mm.
Typical applications include load switching, battery protection, and power management in portable electronics. The device is RoHS3 compliant, Pb-Free, and Halide Free, meeting environmental standards. It is supplied in tape and reel packaging with 3000 pieces per reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.97 | $0.97 |
| 10+ | $0.60 | $0.60 |
| 50+ | $0.44 | $0.44 |
| 100+ | $0.39 | $0.39 |
| 500+ | $0.30 | $0.30 |
| 3,000+ | $0.23 | $0.23 |
| 6,000+ | $0.22 | $0.22 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is -20V.
The FDC6306P is available in a SuperSOT-6 (TSOT-23-6) surface mount package.
The operating junction temperature range is -55°C to 150°C.
Yes, the FDC6306P is RoHS3 compliant, Pb-Free, and Halide Free.
The maximum continuous drain current is -1.9A.
The maximum on-resistance is 170mΩ at Vgs=-4.5V and 250mΩ at Vgs=-2.5V.
The maximum gate charge is 4.2nC at Vgs=4.5V.