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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
93,000 pcs
|
93000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
83,880 pcs
|
83880 pcs | On Request | 1 | On Request | On Request | 1343+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain Current (Maximum @ Peak) | |
| Drain Source On Resistance (Maximum @ VGS=2.7 V) | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Termination Style | |
| Vgs(th) (Max) @ Id |
The FDC6304P is a dual P-Channel logic level MOSFET from On Semiconductor, designed for low-power switching applications. It features a drain-source breakdown voltage of 25 V and a continuous drain current of 460 mA, with a peak current capability of 1 A.
The device offers a maximum on-resistance of 1.1 Ω at Vgs = 4.5 V and 1.5 Ω at Vgs = 2.7 V, making it suitable for battery-operated and low-voltage circuits. The logic level gate threshold allows direct drive from 2.5 V logic.
Housed in a compact SOT-23-6 Thin / TSOT-23-6 surface mount package (SuperSOT™-6), the MOSFET supports a maximum power dissipation of 700 mW and operates over a junction temperature range of -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 6,000+ | $0.16 | $0.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 25 V minimum.
The maximum continuous drain current is 460 mA.
The maximum drain-source on-resistance is 1.1 Ω at Vgs = 4.5 V and Id = 500 mA.
It is available in SOT-23-6 Thin, TSOT-23-6 (SuperSOT™-6) surface mount package.
The junction temperature range is -55°C to 150°C.
It is listed as RoHS3 Compliant, but this is unverified low-confidence data.
The maximum gate threshold voltage is 1.5 V at Id = 250 µA.