FDC6304P Dual P-Channel MOSFET, 25V Vds, 460mA continuous drain current, surface mount in SOT-23-6 Thin/TSOT-23-6 package.
Mfr Part #:

FDC6304P

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual P-Channel MOSFET, 25V Vds, 460mA continuous drain current, surface mount in SOT-23-6 Thin/TSOT-23-6 package.
Total Stock: 176,880 pcs
$ Price Range: $0.16

FDC6304P Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
93,000 pcs
93000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
83,880 pcs
83880 pcs On Request 1 On Request On Request 1343+ On Request On Request

FDC6304P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain Current (Maximum @ Peak)
Drain Source On Resistance (Maximum @ VGS=2.7 V)
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Termination Style
Vgs(th) (Max) @ Id

FDC6304P Description

Short technical summary and product information.

The FDC6304P is a dual P-Channel logic level MOSFET from On Semiconductor, designed for low-power switching applications. It features a drain-source breakdown voltage of 25 V and a continuous drain current of 460 mA, with a peak current capability of 1 A.

 

The device offers a maximum on-resistance of 1.1 Ω at Vgs = 4.5 V and 1.5 Ω at Vgs = 2.7 V, making it suitable for battery-operated and low-voltage circuits. The logic level gate threshold allows direct drive from 2.5 V logic.

 

Housed in a compact SOT-23-6 Thin / TSOT-23-6 surface mount package (SuperSOT™-6), the MOSFET supports a maximum power dissipation of 700 mW and operates over a junction temperature range of -55°C to 150°C.

FDC6304P Quick Information

Product Type: MOSFET - Arrays
Series: SuperSOT-6
Canonical Name: FDC6304P Dual P-Channel MOSFET
Subcategory: Dual P-Channel MOSFET Arrays

FDC6304P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

FDC6304P Estimated Pricing

Qty Low High
6,000+ $0.16 $0.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDC6304P Features

  • Dual P-Channel MOSFET in one package.
  • 25V drain-source breakdown voltage rating.
  • 460mA continuous drain current capability.
  • 1.1Ω maximum on-resistance at 4.5V gate drive.
  • Surface mount SOT-23-6 Thin package.

FDC6304P Applications

  • Ideal for load switching in portable devices.
  • Used in battery powered power management circuits.
  • Suitable for logic level signal switching.
  • Can be used in DC-DC converter secondary side.

FDC6304P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDC6304P?

The drain-source breakdown voltage is 25 V minimum.

What is the continuous drain current rating?

The maximum continuous drain current is 460 mA.

What is the on-resistance at 4.5V gate drive?

The maximum drain-source on-resistance is 1.1 Ω at Vgs = 4.5 V and Id = 500 mA.

What package does the FDC6304P come in?

It is available in SOT-23-6 Thin, TSOT-23-6 (SuperSOT™-6) surface mount package.

What is the operating temperature range?

The junction temperature range is -55°C to 150°C.

Is the FDC6304P RoHS compliant?

It is listed as RoHS3 Compliant, but this is unverified low-confidence data.

What is the gate threshold voltage?

The maximum gate threshold voltage is 1.5 V at Id = 250 µA.

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