| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
119,237 pcs
|
119237 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,415 pcs
|
1415 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
805 pcs
|
805 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
487 pcs
|
487 pcs | On Request | 1 | On Request | On Request | 2022 | On Request | On Request | |
|
74 pcs
|
74 pcs | On Request | 1 | On Request | On Request | 1513 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDC6303N is a dual N-Channel logic level enhancement mode field effect transistor produced using onsemi's proprietary high cell density DMOS technology. This device is designed for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required, this one N-Channel FET can replace several digital transistors with different bias resistors.
The device features a drain-source voltage rating of 25V, continuous drain current of 0.68A, and pulsed drain current of 2A. The on-resistance is 0.45Ω maximum at Vgs=4.5V and 0.6Ω maximum at Vgs=2.7V, enabling operation in 3V circuits. The gate threshold voltage is less than 1.5V. An integrated gate-source Zener diode provides ESD ruggedness with a rating of 6.0 kV Human Body Model.
The FDC6303N is offered in a SuperSOT-6 surface mount package (TSOT-23-6 Thin) and is Pb-Free, Halide Free, and RoHS Compliant. The operating junction temperature range is -55°C to 150°C. Maximum power dissipation is 0.9W (Note 1a) and 0.7W (Note 1b).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.78 | $0.78 |
| 10+ | $0.49 | $0.49 |
| 50+ | $0.36 | $0.36 |
| 100+ | $0.31 | $0.31 |
| 500+ | $0.24 | $0.24 |
| 3,000+ | $0.18 | $0.18 |
| 6,000+ | $0.17 | $0.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 25 V.
The continuous drain current is 0.68 A.
The maximum on-resistance (Rds(on)) is 0.45 Ω at Vgs = 4.5 V and Id = 500 mA.
The operating junction temperature range is -55°C to 150°C.
Yes, the FDC6303N is RoHS3 compliant, Pb-Free, and Halide Free as stated in the datasheet.
The FDC6303N is available in a SuperSOT-6 surface mount package (TSOT-23-6 Thin).
The ESD rating is 6.0 kV minimum, tested using the Human Body Model (100 pF / 1500 Ω).