FDC6301N Dual N-Channel logic level MOSFET from On Semiconductor, rated for 25V drain-source voltage and 220mA continuous drain current. Features low on-resistance of 4 Ohm at 4.5V gate drive and is housed in a SuperSOT-6 surface mount package.
Mfr Part #:

FDC6301N

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual N-Channel logic level MOSFET from On Semiconductor, rated for 25V drain-source voltage and 220mA continuous drain current. Features low on-resistance of 4 Ohm at 4.5V gate drive and is housed in a SuperSOT-6 surface mount package.
✓ Total Stock: 15,009 pcs
$ Price Range: $0.13 - $0.64

FDC6301N Available from 5 distributors

✓ Authorised
✓ Non-Authorised

FDC6301N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

FDC6301N Description

Short technical summary and product information.

The FDC6301N is a dual N-channel logic level enhancement mode MOSFET from On Semiconductor, manufactured using their proprietary high cell density DMOS technology. It is designed for low voltage applications and can replace several digital transistors without requiring bias resistors.

 

Key electrical specifications include a drain-source voltage rating of 25V, continuous drain current of 220mA (0.5A pulsed), and a maximum on-resistance of 4 Ohm at Vgs=4.5V and Id=400mA. The gate threshold voltage is less than 1.5V, enabling direct operation from 3V logic circuits. Gate charge is 0.7nC maximum at Vgs=4.5V, and input capacitance is 9.5pF at Vds=10V. The device features an ESD rating of 6 kV (Human Body Model) for robust handling.

 

The FDC6301N is housed in a SuperSOT-6 package (SOT-23-6 Thin, TSOT-23-6) and is surface mount compatible. It is supplied in tape and reel packaging with a standard quantity of 3000 pieces. The device is Pb-Free and Halide Free, and is claimed to be RoHS3 Compliant and REACH Unaffected (compliance status unverified). Operating temperature range is -55°C to 150°C.

FDC6301N Quick Information

Product Type: MOSFET Array
Series: FDC6301N
Canonical Name: Dual N-Channel MOSFET, 25V, 220mA, SuperSOT-6
Subcategory: Dual N-Channel

FDC6301N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDC6301N Estimated Pricing

Qty Low High
1+ $0.64 $0.64
10+ $0.39 $0.39
50+ $0.29 $0.29
100+ $0.25 $0.25
500+ $0.19 $0.19
3,000+ $0.14 $0.14
6,000+ $0.13 $0.13

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDC6301N Features

  • Dual N-channel logic level MOSFET.
  • 25V drain-source voltage rating.
  • 220mA continuous drain current.
  • Low on-resistance of 4 Ohm at 4.5V.
  • ESD ruggedness >6 kV human body model.

FDC6301N Applications

  • Replacement for digital transistors.
  • Low voltage load switching.
  • Direct drive from 3V logic circuits.
  • Signal switching applications.

FDC6301N FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

25V.

What is the continuous drain current?

220mA.

What is the on-resistance?

4 Ohm maximum at Vgs=4.5V and Id=400mA.

What is the operating temperature range?

-55°C to 150°C.

What is the package type?

SOT-23-6 Thin, TSOT-23-6 (SuperSOT-6).

Is it RoHS compliant?

RoHS3 Compliant (unverified).

What is the ESD rating?

6 kV Human Body Model.

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