| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,727 pcs
|
2727 pcs | On Request | 1 | On Request | On Request | 2008 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain Source On Resistance (Typical @ Vgs = 4.5 V, Id = 4.2 A) | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate Threshold Voltage (Maximum @ ID = -250 µA) | |
| Gate-Source Voltage | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation (Maximum @ Dual operation) | |
| Power Dissipation (Maximum @ Single operation) | |
| Rds On (Max) @ Id, Vgs | |
| Reel Size | |
| Standard Package Quantity | |
| Supplier Device Package | |
| Tape Width | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Vgs(th) (Max) @ Id |
The FDC6020C is a complementary N and P-Channel MOSFET array manufactured by ON Semiconductor, formerly Fairchild Semiconductor. It utilizes the PowerTrench process to achieve low on-state resistance while maintaining excellent switching performance. The device integrates two MOSFETs: a P-Channel (Q1) and an N-Channel (Q2) in a single SuperSOT-6 FLMP package.
Key electrical specifications include a drain-source voltage rating of 20V for both channels. The N-Channel MOSFET can handle a continuous drain current of 5.9A with a maximum on-resistance of 27 mΩ at Vgs=4.5V. The P-Channel MOSFET supports 4.2A continuous drain current with a typical on-resistance of 55 mΩ at Vgs=-4.5V. The gate threshold voltage is 1.5V for the N-Channel and -1.5V for the P-Channel, making them suitable for logic-level gate drive applications. The device features low gate charge (8 nC at Vgs=4.5V) and input capacitance (677 pF at Vds=10V), enabling efficient switching in DC-DC converters and load switches.
The package is a 6-lead SuperSOT-6 FLMP (Flat Lead Molded Package) with enhanced thermal performance. The thermal resistance junction-to-ambient is 68°C/W, and the junction-to-case resistance is 1°C/W. The operating junction temperature range is -55°C to 150°C. The device is supplied in tape and reel packaging with 3000 units per reel, suitable for automated assembly.
This complementary MOSFET array is ideal for applications such as DC/DC converters, load switches, and motor driving circuits in low-voltage, battery-powered systems. The logic-level gate thresholds allow direct interface with low-voltage microcontrollers.
The maximum drain-source voltage is 20V for both N and P-Channels.
The FDC6020C is available in a 6-SSOT Flat-lead, SuperSOT-6 FLMP surface-mount package.
The operating junction temperature range is -55°C to 150°C.
The FDC6020C is listed as RoHS3 Compliant, but this is unverified and has low confidence. Verify with the manufacturer.
The N-Channel (Q2) maximum continuous drain current is 5.9A.
The P-Channel gate threshold voltage is typically -1.0V, with a maximum of -1.5V at Id=-250µA.
The junction-to-ambient thermal resistance is 68°C/W, and junction-to-case is 1°C/W.