| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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33,000 pcs
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33000 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Tape & Reel | |
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The FDC5661N is an N-Channel MOSFET from On Semiconductor, designed for efficient power switching in DC/DC converters and motor drive applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 4.3A at 25°C. The device offers low on-resistance: 47mΩ maximum at VGS=10V and ID=4.3A, and 60mΩ maximum at VGS=4.5V and ID=4A, enabling logic-level gate drive operation.
Key electrical characteristics include a typical gate threshold voltage of 2.0V, low gate charge (typical 14.5nC total), and fast switching speeds with typical turn-on delay of 7.2ns and turn-off delay of 19.3ns. The MOSFET is avalanche-rated with a single pulse avalanche energy of 81mJ. It operates over a junction temperature range of -55°C to +150°C.
The FDC5661N is housed in a compact TSOT-23-6 surface mount package, suitable for space-constrained designs. It is Pb-Free, Halogen Free/BFR Free, and RoHS compliant. The device is also available as the DFDC5661N alternate part number.
The maximum drain-source voltage (Vdss) is 60V.
The FDC5661N is available in SOT-23-6 Thin and TSOT-23-6 surface mount packages.
The operating junction temperature range is -55°C to +150°C.
Yes, the FDC5661N is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free as per the datasheet.
The typical on-resistance is 38mΩ at VGS=10V and ID=4.3A.
The typical total gate charge is 14.5nC at VGS=10V, VDD=30V, ID=4.3A.
Yes, the single pulse avalanche energy is 81mJ at L=14mH, IAS=3.4A, starting TJ=25°C.