FDC5661N N-Channel MOSFET with 60V drain-source voltage and 4.3A continuous drain current. Features low on-resistance of 47mΩ at 10V gate drive.
Mfr Part #:

FDC5661N

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 60V drain-source voltage and 4.3A continuous drain current. Features low on-resistance of 47mΩ at 10V gate drive.
✓ Total Stock: 33,000 pcs

FDC5661N Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
33,000 pcs
33000 pcs On Request 1 On Request On Request 15+ On Request On Request

FDC5661N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Turn Off Time
Turn On Time
Vgs (Max)
Vgs(th) (Max) @ Id

FDC5661N Description

Short technical summary and product information.

The FDC5661N is an N-Channel MOSFET from On Semiconductor, designed for efficient power switching in DC/DC converters and motor drive applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 4.3A at 25°C. The device offers low on-resistance: 47mΩ maximum at VGS=10V and ID=4.3A, and 60mΩ maximum at VGS=4.5V and ID=4A, enabling logic-level gate drive operation.

 

Key electrical characteristics include a typical gate threshold voltage of 2.0V, low gate charge (typical 14.5nC total), and fast switching speeds with typical turn-on delay of 7.2ns and turn-off delay of 19.3ns. The MOSFET is avalanche-rated with a single pulse avalanche energy of 81mJ. It operates over a junction temperature range of -55°C to +150°C.

 

The FDC5661N is housed in a compact TSOT-23-6 surface mount package, suitable for space-constrained designs. It is Pb-Free, Halogen Free/BFR Free, and RoHS compliant. The device is also available as the DFDC5661N alternate part number.

FDC5661N Quick Information

Product Type: MOSFET
Series: POWERTRENCH
Canonical Name: FDC5661N N-Channel MOSFET
Subcategory: Single MOSFET

FDC5661N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDC5661N Features

  • N-Channel MOSFET with 60V drain-source voltage.
  • Continuous drain current rating of 4.3A.
  • Low on-resistance of 47mΩ at 10V gate drive.
  • Logic level gate drive (4.5V) capability.
  • Surface mount TSOT-23-6 package.

FDC5661N Applications

  • Used in DC/DC converter circuits.
  • Suitable for motor drive applications.
  • Ideal for power management in portable devices.
  • Can be used in load switching applications.

FDC5661N FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDC5661N?

The maximum drain-source voltage (Vdss) is 60V.

What package does the FDC5661N come in?

The FDC5661N is available in SOT-23-6 Thin and TSOT-23-6 surface mount packages.

What is the operating temperature range of the FDC5661N?

The operating junction temperature range is -55°C to +150°C.

Is the FDC5661N RoHS compliant?

Yes, the FDC5661N is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free as per the datasheet.

What is the typical on-resistance of the FDC5661N at 10V gate drive?

The typical on-resistance is 38mΩ at VGS=10V and ID=4.3A.

What is the total gate charge of the FDC5661N?

The typical total gate charge is 14.5nC at VGS=10V, VDD=30V, ID=4.3A.

Does the FDC5661N have avalanche energy rating?

Yes, the single pulse avalanche energy is 81mJ at L=14mH, IAS=3.4A, starting TJ=25°C.

Home
Account

Categories