| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,022 pcs
|
8022 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Storage Temperature | |
| Tape & Reel |
This 60V P-Channel MOSFET from TECH PUBLIC, part number FDC5614P, is built using the high-voltage POWERTRENCH process, optimized for power management applications. It features a continuous drain current of -3A and a drain-source voltage of -60V.
The device boasts low on-resistance values, with RDS(on) measuring 0.105 Ω at VGS = -10V and 0.135 Ω at VGS = -4.5V. This high-performance trench technology ensures extremely low RDS(on), contributing to efficient operation.
Key electrical characteristics include a gate threshold voltage of -1.6V and a breakdown voltage of -60V. The MOSFET is designed for applications such as DC-DC converters, load switches, and general power management.
Packaged in a TSOT-23-6 surface-mount case, the FDC5614P is supplied on tape and reel with a standard package quantity of 3000 units. It is also Pb-Free and Halide Free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-3 A
-60 V
105 mΩ
-55 to 150 °C
TSOT-23-6
RoHS3 Compliant
Halide Free