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FDC365P The FDC365P is a P-Channel MOSFET from ON Semiconductor with a 35V drain-source voltage rating and 4.3A continuous drain current. It features a low 55mOhm on-resistance at 10V gate drive.
Mfr Part #:

FDC365P

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDC365P is a P-Channel MOSFET from ON Semiconductor with a 35V drain-source voltage rating and 4.3A continuous drain current. It features a low 55mOhm on-resistance at 10V gate drive.
✓ Total Stock: 6,375 pcs

FDC365P Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Braun Electronic Components ✓
Non-Authorised Inventory information
3,228 pcs
On Request
3228 pcs On Request 1 On Request On Request On Request On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
3,147 pcs
On Request
3147 pcs On Request 1 On Request On Request On Request On Request On Request
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FDC365P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDC365P Description

Short technical summary and product information.

The FDC365P is a P-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It is designed for load switching and power management applications requiring a compact surface-mount solution.

 

Key electrical specifications include a drain-to-source voltage (Vdss) of 35V and a continuous drain current (Id) of 4.3A at ambient temperature. The device features a maximum on-resistance (Rds(on)) of 55mOhm at a gate-source voltage of 10V and a drain current of 4.2A. The gate threshold voltage (Vgs(th)) is a maximum of 3V at 250µA drain current. The maximum gate-source voltage rating is ±20V.

 

The FDC365P is housed in a SuperSOT-6 surface-mount package, which is compatible with SOT-23-6 Thin and TSOT-23-6 footprints. It has an operating junction temperature range of -55°C to 150°C. The device offers a maximum power dissipation of 1.6W at ambient temperature.

FDC365P Quick Information

Product Type: P-Channel MOSFET
Series: PowerTrench
Canonical Name: FDC365P P-Channel MOSFET
Subcategory: Single P-Channel

FDC365P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDC365P Features

  • P-Channel MOSFET with 35V drain-source voltage.
  • Continuous drain current rating of 4.3A.
  • Low on-resistance of 55mOhm at 10V gate drive.
  • Surface mount SuperSOT-6 package.
  • Operating temperature range from -55°C to 150°C.

FDC365P Applications

  • Load switching in portable electronics.
  • Power management for battery-powered devices.
  • DC-DC converter and regulator circuits.

FDC365P FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDC365P?

The FDC365P has a maximum drain-source voltage (Vdss) of 35V.

What is the continuous drain current rating of the FDC365P?

The continuous drain current (Id) is 4.3A at ambient temperature (Ta).

What is the on-resistance of the FDC365P?

The maximum on-resistance (Rds(on)) is 55mOhm at Vgs=10V and Id=4.2A.

What package does the FDC365P come in?

The FDC365P is available in a SuperSOT-6 surface-mount package, compatible with SOT-23-6 Thin and TSOT-23-6 footprints.

What is the operating temperature range of the FDC365P?

The operating junction temperature range is -55°C to 150°C.

Is the FDC365P RoHS compliant?

The FDC365P is listed as RoHS3 compliant, though this data is unverified.

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