FDC3512 The FDC3512 is an N-Channel PowerTrench MOSFET from onsemi designed for DC/DC converter efficiency. It features 80V drain-source voltage, 3A continuous drain current, and low on-resistance of 77 mOhm at 10V.
Mfr Part #:

FDC3512

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDC3512 is an N-Channel PowerTrench MOSFET from onsemi designed for DC/DC converter efficiency. It features 80V drain-source voltage, 3A continuous drain current, and low on-resistance of 77 mOhm at 10V.
✓ Total Stock: 11,881 pcs
$ Price Range: $0.35 - $1.57

FDC3512 Available from 3 distributors

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FDC3512 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDC3512 Description

Short technical summary and product information.

The FDC3512 is an N-Channel PowerTrench MOSFET manufactured by onsemi (formerly ON Semiconductor). It is specifically designed to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The device has been optimized for low gate charge, low Rds(on), and fast switching speed.

 

Key electrical specifications include a drain-source voltage (Vdss) of 80V and a continuous drain current of 3.0A at 25°C. The maximum on-resistance is 77 mOhm at Vgs=10V and 88 mOhm at Vgs=6V. The gate threshold voltage is 4V maximum at 250µA drain current. Total gate charge is 13 nC typical and 18 nC maximum at Vgs=10V. Input capacitance is 634 pF maximum at Vds=40V.

 

The device is offered in a surface mount SuperSOT-6 package (TSOT-23-6 Thin) with 6 leads. It is rated for operation over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 1.6W at 25°C ambient (on 1 in² pad of 2 oz copper) and 0.8W with minimum pad. The part is Pb-free, Halide Free, and RoHS compliant.

FDC3512 Quick Information

Product Type: MOSFET
Canonical Name: FDC3512 N-Channel PowerTrench MOSFET
Subcategory: N-Channel MOSFET

FDC3512 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDC3512 Estimated Pricing

Qty Low High
1+ $1.57 $1.57
10+ $0.99 $0.99
50+ $0.74 $0.74
100+ $0.66 $0.66
500+ $0.51 $0.51
3,000+ $0.37 $0.37
6,000+ $0.35 $0.35

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDC3512 Features

  • N-Channel PowerTrench MOSFET for DC/DC converters.
  • 80V drain-source voltage with 3A continuous current.
  • Low on-resistance of 77 mOhm at 10V gate drive.
  • Low gate charge of 13 nC typical for fast switching.
  • Surface mount SuperSOT-6 package with 6 leads.

FDC3512 Applications

  • DC/DC converters using synchronous or conventional PWM.
  • Power management in portable and battery-powered devices.
  • Load switching and power distribution applications.
  • High-efficiency voltage regulator modules.

FDC3512 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDC3512?

The drain-source voltage (Vdss) is 80V.

What is the continuous drain current of the FDC3512?

The continuous drain current is 3.0A at 25°C ambient (note 1a).

What is the on-resistance of the FDC3512?

The maximum on-resistance is 77 mOhm at Vgs=10V and 88 mOhm at Vgs=6V (both at Id=3A).

What package is the FDC3512 available in?

The FDC3512 is offered in a surface mount SuperSOT-6 package (TSOT-23-6 Thin).

What is the operating temperature range of the FDC3512?

The operating junction temperature range is -55°C to 150°C.

Is the FDC3512 RoHS compliant?

The datasheet states the device is Pb-Free, Halide Free, and RoHS Compliant.

What is the gate threshold voltage of the FDC3512?

The maximum gate threshold voltage is 4V at a drain current of 250µA.

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