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FDC30N20DZ N-Channel MOSFET with 30V drain-source voltage, 4.6A continuous drain current, and 31mOhm maximum on-resistance at 10V gate drive.
Mfr Part #:

FDC30N20DZ

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 30V drain-source voltage, 4.6A continuous drain current, and 31mOhm maximum on-resistance at 10V gate drive.
Total Stock: 6,000 pcs
$ Price Range: $0.28

FDC30N20DZ Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,000 pcs
6000 pcs On Request 1 On Request On Request On Request On Request On Request

FDC30N20DZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain Current, Pulsed
Drain to Source Voltage (Vdss)
Drain-to-source breakdown voltage
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Forward Transconductance
Gate Charge (Qg) (Max) @ Vgs
Gate-to-Source Leakage Current
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Pd (Maximum @ Ta = 25 °C, Note 1 b)
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Rds_on (Typical/Maximum @ Vgs = 10 V, Id = 4.6 A, Tj = 125 °C)
Rds_on (Typical/Maximum @ Vgs = 4.5 V, Id = 4.2 A)
Rth_ja (Maximum @ Note 1 A)
Rth_ja (Maximum @ Note 1 b)
Single Pulse Avalanche Energy
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Zero Gate Voltage Drain Current

FDC30N20DZ Description

Short technical summary and product information.

The FDC30N20DZ is an N-Channel MOSFET from On Semiconductor using advanced PowerTrench technology. It delivers a maximum drain-source voltage of 30V and continuous drain current of 4.6A (at 25°C, Note 1a). The on-resistance is typically 23mOhm and maximum 31mOhm with 10V gate drive; at 4.5V gate drive typical on-resistance is 27mOhm, maximum 38mOhm. The device features fast switching speed, 100% UIL tested, and typical CDM ESD protection >2kV. It comes in a surface-mount SuperSOT-6 package (SOT-23-6 Thin / TSOT-23-6). Operating junction temperature range is -55°C to 150°C. Total gate charge is 7.9nC at 10V, input capacitance is 535pF at 15V. Suitable for load switch and synchronous rectifier applications.

FDC30N20DZ Quick Information

Product Type: MOSFET
Series: POWERTRENCH
Canonical Name: FDC30N20DZ N-Channel PowerTrench MOSFET
Subcategory: MOSFET

FDC30N20DZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FDC30N20DZ Estimated Pricing

Qty Low High
3,000+ $0.28 $0.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDC30N20DZ Features

  • 100% avalanche (UIL) tested design.
  • Fast switching for efficient power conversion.
  • Maximum drain current of 4.6A continuous.
  • Very low 31mOhm on-resistance at 10V.
  • RoHS3 and Pb-Free compliant package.

FDC30N20DZ Applications

  • Used in low-voltage load switch circuits.
  • Ideal for synchronous rectifier designs.
  • Suitable for DC-DC converter applications.
  • Power management in portable electronics.

FDC30N20DZ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDC30N20DZ?

30V

What is the continuous drain current rating?

4.6A at 25°C (Note 1a)

What is the on-resistance at 10V gate drive?

31 mOhm maximum

What package is the FDC30N20DZ available in?

SuperSOT-6 (SOT-23-6 Thin / TSOT-23-6) surface mount

What is the operating temperature range?

-55°C to 150°C junction temperature

Is the FDC30N20DZ RoHS compliant?

Yes, it is RoHS3 compliant and Pb-Free

What is the gate threshold voltage?

1V minimum, 1.7V typical, 3V maximum at Id=250µA

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