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FDC2512-P FDC2512-P is a 150V N-Channel MOSFET (Metal Oxide) with 1.4A drain current, 425mOhm on-resistance at 10V, in a SuperSOT-6 surface mount package.
Mfr Part #:

FDC2512-P

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDC2512-P is a 150V N-Channel MOSFET (Metal Oxide) with 1.4A drain current, 425mOhm on-resistance at 10V, in a SuperSOT-6 surface mount package.
✓ Total Stock: 201,000 pcs
$ Price Range: $0.27

FDC2512-P Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
201,000 pcs
On Request
201000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDC2512-P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDC2512-P Description

Short technical summary and product information.

The FDC2512-P is an N-Channel MOSFET (Metal Oxide) from On Semiconductor designed for power management and switching applications.

 

It features a drain-to-source voltage rating of 150V and a continuous drain current of 1.4A at ambient temperature. The device has a maximum on-resistance of 425mOhm at a gate voltage of 10V and a drain current of 1.4A.

 

This MOSFET is housed in a SuperSOT-6 surface mount package (SOT-23-6 Thin, TSOT-23-6) and is suitable for automated assembly. The operating junction temperature range is -55°C to 150°C, with a maximum power dissipation of 800mW at ambient temperature.

FDC2512-P Quick Information

Product Type: MOSFET
Canonical Name: FDC2512-P N-Channel MOSFET (Metal Oxide) 150V 1.4A SuperSOT-6
Subcategory: Single MOSFET

FDC2512-P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

FDC2512-P Estimated Pricing

Qty Low High
3,000+ $0.27 $0.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDC2512-P Features

  • 150V drain-to-source voltage rating.
  • 1.4A drain current at ambient temperature.
  • Low on-resistance 425mOhm at 10V.
  • Surface mount SuperSOT-6 package.
  • Operating temperature -55°C to 150°C.

FDC2512-P Applications

  • Power management in portable devices.
  • DC-DC converter switching circuits.
  • Load switch for low-power rails.
  • Battery protection circuits.

FDC2512-P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the FDC2512-P?

The drain-to-source voltage rating (Vdss) is 150 V.

What is the maximum drain current for the FDC2512-P?

The maximum drain current is 1.4 A at ambient temperature (Ta).

What is the on-resistance of the FDC2512-P?

The maximum drain-to-source on-resistance (Rds(on)) is 425 mOhm at a drain current of 1.4 A and gate voltage of 10 V.

What package type is the FDC2512-P available in?

The FDC2512-P is available in a surface mount package: SOT-23-6 Thin, TSOT-23-6 (SuperSOT-6).

What is the operating temperature range of the FDC2512-P?

The operating junction temperature range is -55°C to 150°C.

What is the maximum power dissipation of the FDC2512-P?

The maximum power dissipation is 800 mW at ambient temperature (Ta).

What is the gate threshold voltage of the FDC2512-P?

The maximum gate threshold voltage (Vgs(th)) is 4 V at a drain current of 250 µA.

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