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FDC021N30 N-Channel MOSFET rated for 30V drain-source voltage and 6.1A continuous drain current. Features low on-resistance of 26mOhm at 10V gate drive in a compact SuperSOT-6 surface mount package.
Mfr Part #:

FDC021N30

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated for 30V drain-source voltage and 6.1A continuous drain current. Features low on-resistance of 26mOhm at 10V gate drive in a compact SuperSOT-6 surface mount package.
✓ Total Stock: 83,676 pcs
$ Price Range: $0.03

FDC021N30 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
83,676 pcs
On Request
83676 pcs On Request 1 On Request On Request On Request On Request On Request
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FDC021N30 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDC021N30 Description

Short technical summary and product information.

The FDC021N30 is an N-Channel MOSFET from On Semiconductor designed for low-voltage power switching applications. It features a drain-source breakdown voltage of 30V and a continuous drain current of 6.1A at ambient temperature. The device offers a maximum on-resistance of 26mOhm when driven with 10V gate voltage, ensuring efficient power handling.

 

Key electrical characteristics include a gate threshold voltage of up to 3V at 250µA drain current, a maximum gate charge of 10.8nC at 10V, and an input capacitance of 710pF at 15V drain-source voltage. The MOSFET can dissipate up to 700mW at ambient temperature and operates over a junction temperature range of -55°C to 150°C.

 

The device is housed in a surface mount SuperSOT-6 package, which is also compatible with SOT-23-6 Thin and TSOT-23-6 footprints. This compact package makes it suitable for space-constrained designs. The FDC021N30 is RoHS3 compliant and has an MSL rating of 1 (unlimited).

FDC021N30 Quick Information

Product Type: MOSFET
Canonical Name: FDC021N30 N-Channel MOSFET 30V 6.1A SuperSOT-6
Subcategory: Single MOSFET

FDC021N30 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDC021N30 Estimated Pricing

Qty Low High
18,000+ $0.03 $0.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDC021N30 Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • 6.1A continuous drain current rating.
  • Low on-resistance of 26mOhm at 10V gate drive.
  • Surface mount SuperSOT-6 package.
  • RoHS3 compliant and MSL 1 unlimited.

FDC021N30 Applications

  • Ideal for low-voltage power switching circuits.
  • Used in battery management and load switching.
  • Suitable for DC-DC converter applications.
  • Applicable in portable electronics power management.

FDC021N30 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDC021N30?

30V.

What package does the FDC021N30 come in?

Surface mount SuperSOT-6 package, also compatible with SOT-23-6 Thin and TSOT-23-6.

What is the operating temperature range of the FDC021N30?

-55°C to 150°C junction temperature.

Is the FDC021N30 RoHS compliant?

Yes, RoHS3 compliant.

What is the maximum on-resistance of the FDC021N30?

26mOhm at Id=6.1A, Vgs=10V.

What is the gate threshold voltage?

Maximum 3V at Id=250µA.

What is the gate charge?

Maximum 10.8nC at Vgs=10V.

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