FDBL86561-F085 N-Channel Power MOSFET from On Semiconductor, rated for 60V drain-source voltage and 300A continuous drain current. Features low on-resistance of 1.1mΩ max and 8-HPSOF surface mount package.
Mfr Part #:

FDBL86561-F085

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel Power MOSFET from On Semiconductor, rated for 60V drain-source voltage and 300A continuous drain current. Features low on-resistance of 1.1mΩ max and 8-HPSOF surface mount package.
✓ Total Stock: 18,012 pcs
$ Price Range: $2.61 - $6.98

FDBL86561-F085 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
16,000 pcs
16000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,012 pcs
1012 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

FDBL86561-F085 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDBL86561-F085 Description

Short technical summary and product information.

The FDBL86561-F085 is an N-Channel Power MOSFET from On Semiconductor, part of the PowerTrench family. It is designed for high-current automotive and industrial applications. Key electrical specifications include a drain-source breakdown voltage of 60V, continuous drain current of 300A at Tc=25°C with Vgs=10V, and a maximum on-resistance of 1.1mΩ at Id=80A, Vgs=10V (typical 0.85mΩ). The device features a typical total gate charge of 170nC and input capacitance of 13650pF at Vds=30V. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive powertrain and engine control systems. The MOSFET is housed in an 8-PowerSFN (8-HPSOF) surface mount package with a junction-to-case thermal resistance of 0.35°C/W and a maximum power dissipation of 429W. Operating temperature range is -55°C to 175°C. The device is Pb-Free and RoHS3 compliant per the datasheet.

FDBL86561-F085 Quick Information

Product Type: MOSFET
Canonical Name: FDBL86561-F085 N-Channel Power MOSFET
Subcategory: N-Channel MOSFET

FDBL86561-F085 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

FDBL86561-F085 Estimated Pricing

Qty Low High
1+ $6.98 $6.98
10+ $4.70 $4.70
50+ $3.72 $3.72
100+ $3.40 $3.40
500+ $3.20 $3.20
2,000+ $2.61 $2.61

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDBL86561-F085 Features

  • N-Channel PowerTrench MOSFET technology.
  • Rated for 60V drain-source voltage.
  • 300A continuous drain current capability.
  • Low on-resistance: 1.1mΩ max, 0.85mΩ typical.
  • AEC-Q101 qualified for automotive applications.

FDBL86561-F085 Applications

  • Automotive engine control modules.
  • Powertrain management systems.
  • Solenoid and motor drivers.
  • Integrated starter/alternator designs.
  • Primary switch for 12V systems.

FDBL86561-F085 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

60V.

What package is this MOSFET available in?

8-PowerSFN (8-HPSOF) surface mount package.

What is the operating temperature range?

-55°C to 175°C.

Is this device RoHS compliant?

Yes, RoHS3 compliant and Pb-Free per datasheet.

What is the typical on-resistance?

0.85mΩ typical at Vgs=10V, Id=80A.

What is the maximum gate charge?

220nC max at Vgs=10V.

What is the avalanche energy rating?

1167mJ single pulse.

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