| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDBL0330N80 is an N-Channel MOSFET from ON Semiconductor, built with Metal Oxide technology. It features a maximum drain-source voltage of 80V and a continuous drain current of 220A at case temperature. The device offers a low on-resistance of 3mOhm maximum at 80A drain current and 10V gate drive. Gate charge is 112nC at 10V, and input capacitance is 6320pF at 40V drain-source voltage. The gate threshold voltage is 4V maximum at 250µA. The device can dissipate up to 300W at case temperature. It is designed for surface mount applications in an 8-PowerSFN package, with supplier device package 8-HPSOF. The operating junction temperature range is -55°C to 175°C.
The maximum drain-source voltage is 80V.
It comes in an 8-PowerSFN surface mount package with supplier device package 8-HPSOF.
The junction temperature range is -55°C to 175°C.
The RoHS status is listed as RoHS3 Compliant, but this is unverified.
220A at case temperature.
3mOhm maximum at 80A drain current and 10V gate drive.
300W at case temperature.