| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,000 pcs
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8000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDBL0260N100 is an N-Channel enhancement-mode power MOSFET manufactured by ON Semiconductor. It is designed for high-efficiency power conversion applications requiring low on-resistance and high current capability.
Key electrical specifications include a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 200A at case temperature (Tc). The device achieves a maximum drain-source on-resistance (Rds(on)) of just 2.6 mOhm at Vgs=10V and Id=80A, enabling low conduction losses. The gate threshold voltage (Vgs(th)) is a maximum of 4V at Id=250µA, and the maximum gate-source voltage is ±20V. Input capacitance (Ciss) is 9265 pF at Vds=50V, and total gate charge (Qg) is 116 nC at Vgs=10V.
The MOSFET is rated for a maximum power dissipation of 3.5W at ambient temperature (Ta) and 250W at case temperature (Tc). It operates over a junction temperature range of -55°C to +150°C.
The device is supplied in a surface-mount 8-PowerSFN package (also designated 8-HPSOF), which provides excellent thermal performance and a compact footprint for space-constrained designs.
The drain-to-source voltage (Vdss) is 100V.
The maximum continuous drain current (Id) is 200A at case temperature (Tc).
The maximum drain-source on-resistance (Rds(on)) is 2.6 mOhm at Vgs=10V and Id=80A.
It is supplied in a surface-mount 8-PowerSFN package, also designated as 8-HPSOF.
The operating junction temperature range is -55°C to +150°C.
The maximum gate threshold voltage (Vgs(th)) is 4V at Id=250µA.
Maximum power dissipation is 3.5W at ambient temperature (Ta) and 250W at case temperature (Tc).