FDBL0210N80 N-Channel MOSFET, 80V drain-source voltage, 240A continuous drain current, 2mOhm on-resistance, surface mount 8-HPSOF package.
Mfr Part #:

FDBL0210N80

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET, 80V drain-source voltage, 240A continuous drain current, 2mOhm on-resistance, surface mount 8-HPSOF package.
✓ Total Stock: 1,101 pcs

FDBL0210N80 Available from 1 distributor

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FDBL0210N80 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDBL0210N80 Description

Short technical summary and product information.

The FDBL0210N80 is an N-Channel power MOSFET from ON Semiconductor, designed for high-current switching applications. It features a drain-source voltage (Vdss) of 80V and a continuous drain current (Id) of 240A at Tc, making it suitable for demanding power management tasks. The device achieves a low on-resistance of 2mOhm maximum at Id=80A and Vgs=10V, minimizing conduction losses.

 

This MOSFET utilizes MOSFET (Metal Oxide) technology and offers a maximum power dissipation of 357W at Tj. The gate charge (Qg) is 169nC at Vgs=10V, and input capacitance (Ciss) is 10pF at Vds=40V, providing moderate switching performance. The gate threshold voltage (Vgs(th)) is 4V maximum at Id=250µA, and the maximum gate-source voltage is ±20V.

 

The device is housed in an 8-PowerSFN package with a supplier device package of 8-HPSOF, designed for surface mount assembly. It operates over a junction temperature range of -55°C to 175°C. The FDBL0210N80 is RoHS3 compliant and REACH unaffected, with an MSL of Level 1 (unlimited). It is commonly used in power supplies, DC-DC converters, motor drives, and other high-current switching circuits.

FDBL0210N80 Quick Information

Product Type: MOSFET
Canonical Name: FDBL0210N80 N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

FDBL0210N80 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDBL0210N80 Features

  • N-Channel MOSFET with 80V drain-source voltage.
  • 240A continuous drain current capability.
  • Low on-resistance of 2mOhm at 10V gate drive.
  • Surface mount 8-HPSOF package.
  • RoHS3 compliant and REACH unaffected.

FDBL0210N80 Applications

  • Used in high-current power management circuits.
  • Suitable for DC-DC converters and motor drives.
  • Ideal for synchronous rectification in power supplies.
  • Applied in automotive and industrial systems.

FDBL0210N80 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDBL0210N80?

The drain-source voltage (Vdss) is 80V.

What is the continuous drain current rating?

The continuous drain current (Id) is 240A at Tc.

What is the on-resistance of this MOSFET?

The maximum on-resistance (Rds On) is 2mOhm at Id=80A and Vgs=10V.

What package does the FDBL0210N80 come in?

It is available in an 8-PowerSFN surface mount package with supplier device package 8-HPSOF.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the FDBL0210N80 RoHS compliant?

Yes, it is RoHS3 compliant as verified in the datasheet.

What is the gate charge of this MOSFET?

The maximum gate charge (Qg) is 169nC at Vgs=10V.

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