| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,645 pcs
|
2645 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | 21+22+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDBL0150N80 is an N-Channel power MOSFET from ON Semiconductor designed for high-current switching applications. It features a drain-source voltage rating of 80V and a continuous drain current of 300A, making it suitable for demanding power conversion and motor control circuits.
The device offers a low maximum on-resistance of 1.4mOhm at Vgs=10V and Id=80A, which minimizes conduction losses. The gate charge is 188nC maximum at 10V, and the input capacitance is 12800pF at Vds=25V. The gate threshold voltage is 4V maximum at Id=250µA, and the maximum gate-source voltage is ±20V.
The MOSFET is housed in an 8-PowerSFN surface-mount package with a supplier device package designation of 8-HPSOF. It operates over a junction temperature range of -55°C to 175°C and has a maximum power dissipation of 429W.
The drain-source voltage (Vdss) is 80V.
The maximum continuous drain current is 300A.
The maximum on-resistance is 1.4mOhm at Vgs=10V and Id=80A.
It uses an 8-PowerSFN surface-mount package, also designated as 8-HPSOF.
The operating junction temperature range is -55°C to 175°C.
The part is listed as RoHS3 Compliant, though this is unverified.