FDBL0150N80 N-Channel power MOSFET with 80V drain-source voltage rating and 300A continuous drain current. Low on-resistance of 1.4mOhm typical at 10V gate drive.
Mfr Part #:

FDBL0150N80

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel power MOSFET with 80V drain-source voltage rating and 300A continuous drain current. Low on-resistance of 1.4mOhm typical at 10V gate drive.
✓ Total Stock: 5,645 pcs

FDBL0150N80 Available from 3 distributors

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✓ Non-Authorised
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2,645 pcs
2645 pcs On Request 1 On Request On Request On Request On Request On Request
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2,000 pcs
2000 pcs On Request 1 On Request On Request 21+22+ On Request On Request
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1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

FDBL0150N80 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDBL0150N80 Description

Short technical summary and product information.

The FDBL0150N80 is an N-Channel power MOSFET from ON Semiconductor designed for high-current switching applications. It features a drain-source voltage rating of 80V and a continuous drain current of 300A, making it suitable for demanding power conversion and motor control circuits.

 

The device offers a low maximum on-resistance of 1.4mOhm at Vgs=10V and Id=80A, which minimizes conduction losses. The gate charge is 188nC maximum at 10V, and the input capacitance is 12800pF at Vds=25V. The gate threshold voltage is 4V maximum at Id=250µA, and the maximum gate-source voltage is ±20V.

 

The MOSFET is housed in an 8-PowerSFN surface-mount package with a supplier device package designation of 8-HPSOF. It operates over a junction temperature range of -55°C to 175°C and has a maximum power dissipation of 429W.

FDBL0150N80 Quick Information

Product Type: MOSFET
Series: FDBL0150N80
Canonical Name: FDBL0150N80 N-Channel Power MOSFET
Subcategory: Single N-Channel Power MOSFET

FDBL0150N80 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDBL0150N80 Features

  • N-Channel MOSFET with 80V drain-source rating.
  • 300A continuous drain current capability.
  • Low 1.4mOhm on-resistance at 10V gate drive.
  • Surface-mount 8-HPSOF package for compact designs.
  • Wide operating temperature range -55°C to 175°C.

FDBL0150N80 Applications

  • High-current DC-DC converter power stages.
  • Motor drive and inverter circuits.
  • Battery protection and management systems.
  • Power supply OR-ing and load switching.

FDBL0150N80 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDBL0150N80?

The drain-source voltage (Vdss) is 80V.

What is the maximum continuous drain current?

The maximum continuous drain current is 300A.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 1.4mOhm at Vgs=10V and Id=80A.

What package does the FDBL0150N80 use?

It uses an 8-PowerSFN surface-mount package, also designated as 8-HPSOF.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the FDBL0150N80 RoHS compliant?

The part is listed as RoHS3 Compliant, though this is unverified.

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