| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,000 pcs
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8000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FDBL0110N60 is an N-Channel power MOSFET from ON Semiconductor, designed for high-current switching applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 300A, making it suitable for demanding power management circuits.
Electrical characteristics include an ultra-low on-resistance of 1.1mOhm at 80A and 10V gate drive, a gate charge of 220nC, and an input capacitance of 13650pF. These parameters enable efficient switching and reduced conduction losses in high-frequency designs.
The device is housed in a surface-mount 8-HPSOF package (8-PowerSFN) and can operate over a junction temperature range of -55°C to 175°C. Maximum power dissipation is 429W. The MOSFET is RoHS3 compliant and has an MSL rating of Level 1.
Typical applications include power supplies, DC-DC converters, motor drives, and synchronous rectification circuits where high current handling and low resistance are critical.
The maximum drain-source voltage is 60V.
The maximum continuous drain current is 300A at case temperature.
The typical on-resistance is 1.1mOhm maximum at 80A drain current and 10V gate-source voltage.
It is available in a surface-mount 8-PowerSFN package, also known as 8-HPSOF.
The operating junction temperature range is -55°C to 175°C.
Yes, it is listed as RoHS3 compliant, but this is unverified from the existing database.
The gate threshold voltage is 4V maximum at 250µA drain current.