| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
800 pcs
|
800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDB9409-F085 is a N-Channel power MOSFET manufactured by On Semiconductor. It features a drain-source voltage (Vdss) of 40V and a continuous drain current of 80A at 25°C case temperature. The device utilizes MOSFET (Metal Oxide) technology and offers a low on-resistance of 3.5 mOhm maximum at 80A and 10V gate drive.
Electrical characteristics include a maximum gate charge of 56 nC at 10V and an input capacitance of 2980 pF at 25V drain-source voltage. The gate threshold voltage is 4V maximum at 250µA drain current. The device supports a maximum gate-source voltage of ±20V and is driven at 10V for optimal Rds(on).
The MOSFET is rated for power dissipation up to 94W and operates over a junction temperature range of -55°C to 175°C. It is supplied in a surface-mount D2PAK (TO-263) package, which is also known as TO-263-3 or D²Pak.
This component is suitable for applications requiring high efficiency switching and power management. Its low on-resistance and high current capability make it ideal for use in power supplies, motor drives, and other power conversion circuits.
-55°C to 175°C (junction temperature)
Surface mount D2PAK (TO-263-3, D²Pak)
RoHS3 compliant, but unverified.
40V
80A at 25°C case temperature
3.5 mOhm maximum at 80A and 10V gate drive
56 nC maximum at 10V gate-source voltage