| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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13,555 pcs
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13555 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FDB9406L-F085 is an N-Channel MOSFET manufactured by On Semiconductor. It is designed for high-current switching applications, offering a drain-source voltage (Vdss) of 40V and a continuous drain current of 110A at case temperature. The device features a low maximum on-resistance of 1.5mΩ at 80A and 10V gate drive.
Electrical characteristics include a maximum gate charge of 170nC at 10V, input capacitance of 8600pF at 20V, and a gate threshold voltage of 3V at 250µA. The MOSFET is capable of being driven at 4.5V or 10V, supporting Logic Level operation. Maximum power dissipation is 176W, and the operating junction temperature range spans from -55°C to 175°C.
This MOSFET utilizes PowerTrench technology, as noted in the datasheet, and comes in a surface-mount D²PAK (TO-263) package with three leads and a tab. It is RoHS3 compliant, REACH unaffected, and rated MSL 1 unlimited. The device is suitable for power management, DC-DC converters, and automotive applications.
The drain-source voltage (Vdss) is 40V.
The continuous drain current is 110A at case temperature.
The maximum on-resistance is 1.5mΩ at 80A drain current and 10V gate drive.
The operating junction temperature range is -55°C to 175°C.
It is available in a surface-mount D²PAK (TO-263) package (TO-263-3, D²Pak).
The device is listed as RoHS3 compliant, REACH unaffected, and MSL 1 unlimited.
The maximum gate charge is 170nC at 10V gate-source voltage.