| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
33,600 pcs
|
33600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDB9406-F085 is an N-Channel power MOSFET from On Semiconductor designed for high-efficiency power switching applications.
Key electrical specifications include a maximum drain-to-source voltage of 40V, continuous drain current of 110A at 25°C case temperature, and an ultra-low maximum on-resistance of 1.8mOhm at 80A and 10V gate drive. The device features a typical gate charge of 138nC at 10V and input capacitance of 7710pF at 25V drain-source, enabling fast switching performance.
Packaged in a surface-mount TO-263-3 (D²Pak) case, the MOSFET supports a wide operating junction temperature range from -55°C to 175°C and can dissipate up to 176W. It is suitable for applications requiring high current handling and low conduction losses.
40V.
110A at 25°C case temperature.
Maximum 1.8mOhm at 80A drain current and 10V gate-source voltage.
-55°C to 175°C junction temperature.
Surface-mount TO-263-3 (D²Pak, 2 leads plus tab) also known as D²PAK (TO-263).
RoHS3 compliant status is listed but unverified.