FDB8896 FDB8896 is an N-channel power MOSFET with 30V drain-source voltage rating and up to 93A continuous drain current (at Tc=25°C). It features a low on-resistance of 5.7mOhm max at 10V gate drive.
Mfr Part #:

FDB8896

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDB8896 is an N-channel power MOSFET with 30V drain-source voltage rating and up to 93A continuous drain current (at Tc=25°C). It features a low on-resistance of 5.7mOhm max at 10V gate drive.
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FDB8896 Available from 3 distributors

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FDB8896 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDB8896 Description

Short technical summary and product information.

The FDB8896 is an N-channel MOSFET fabricated with metal-oxide semiconductor technology. It is designed for high-current switching and power conversion applications. The device has a drain-to-source voltage rating of 30V and supports continuous drain currents of 19A at 25°C ambient temperature and 93A at 25°C case temperature.

 

Key electrical characteristics include a maximum on-resistance of 5.7mOhm at 35A drain current and 10V gate drive, a maximum total gate charge of 67nC at 10V, and a maximum input capacitance of 2525pF at 15V. The maximum power dissipation is 80W at 25°C case temperature, and the operating junction temperature range is -55°C to 175°C.

 

The FDB8896 is supplied in a TO-263-3 (D2Pak) surface-mount package, also designated as D2PAK (TO-263). This package is suited for applications where thermal performance is critical. The device supports gate drive voltages of 4.5V and 10V, and the maximum gate-source voltage is ±20V.

FDB8896 Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET, 30V, 93A, D2PAK (TO-263)
Subcategory: Single MOSFET

FDB8896 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDB8896 Features

  • N-channel MOSFET with 30V drain-source rating.
  • 93A continuous drain current at 25°C case.
  • 5.7mOhm maximum on-resistance at 10V gate.
  • Surface-mount TO-263-3 (D2PAK) package.
  • Gate charge of 67nC at 10V drive.

FDB8896 Applications

  • High-current DC-DC converter power stages.
  • Motor control and drive circuits.
  • Power management and load switching.
  • Synchronous rectification in power supplies.

FDB8896 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the FDB8896?

The FDB8896 has a drain-to-source voltage rating (Vdss) of 30V.

What is the package type of the FDB8896?

The FDB8896 is available in a TO-263-3, D2Pak (2 leads + tab) package, also known as D2PAK (TO-263) as the supplier device package.

What is the operating temperature range of the FDB8896?

The FDB8896 operates over a junction temperature range of -55°C to 175°C.

Is the FDB8896 RoHS compliant?

According to existing database data, the FDB8896 is listed as RoHS3 compliant, but this status is unverified.

What are the continuous drain current ratings of the FDB8896?

The continuous drain current is 19A at 25°C ambient temperature and 93A at 25°C case temperature.

What is the maximum drain-to-source on-resistance of the FDB8896?

The maximum on-resistance is 5.7mOhm at a drain current of 35A and gate-source voltage of 10V.

What is the maximum power dissipation of the FDB8896?

The maximum power dissipation is 80W at a case temperature of 25°C.

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