FDB8880 The FDB8880 is an N-Channel power MOSFET from ON Semiconductor with a maximum drain-source voltage of 30V and continuous drain current of 11A at 25°C ambient.
Mfr Part #:

FDB8880

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Mfr Name: On Semiconductor
On Semiconductor
The FDB8880 is an N-Channel power MOSFET from ON Semiconductor with a maximum drain-source voltage of 30V and continuous drain current of 11A at 25°C ambient.
✓ Total Stock: 8,000 pcs

FDB8880 Available from 1 distributor

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FDB8880 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDB8880 Description

Short technical summary and product information.

The FDB8880 is an N-Channel enhancement mode power MOSFET manufactured by ON Semiconductor. It features a maximum drain-source voltage of 30V and a continuous drain current rating of 11A at 25°C ambient temperature (54A at case temperature). The device offers a low on-resistance of 11.6 mOhm maximum at Vgs=10V and Id=40A, making it suitable for high-efficiency power switching applications.

 

This MOSFET utilizes Metal Oxide semiconductor technology and is designed for surface mount assembly. It is supplied in the TO-263-3 (D²Pak) package, also known as D²PAK (TO-263), which provides excellent thermal performance with a maximum power dissipation of 55W at case temperature. The device can operate over a junction temperature range of -55°C to 175°C.

 

Key electrical characteristics include a typical gate threshold voltage of 2.5V maximum at Id=250µA, a maximum gate charge of 29 nC at Vgs=10V, and an input capacitance of 1240 pF at Vds=15V. The recommended gate drive voltage range is 4.5V to 10V. These parameters make the FDB8880 well-suited for DC-DC converters, power management circuits, and motor control applications where efficient switching and low conduction losses are required.

FDB8880 Quick Information

Product Type: MOSFET
Canonical Name: FDB8880 N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

FDB8880 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDB8880 Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • Continuous drain current up to 11A at ambient.
  • Low on-resistance of 11.6 mOhm typical.
  • Surface mount D²PAK (TO-263) package.
  • Wide operating temperature range -55°C to 175°C.

FDB8880 Applications

  • Used in DC-DC converter circuits.
  • Suitable for power management systems.
  • Ideal for motor control applications.
  • Employed in load switching designs.

FDB8880 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDB8880?

The maximum drain-source voltage (Vdss) is 30V.

What is the maximum continuous drain current?

The maximum continuous drain current is 11A at 25°C ambient temperature (Ta) and 54A at case temperature (Tc).

What is the on-resistance of the FDB8880?

The maximum drain-source on-resistance is 11.6 mOhm at Vgs=10V and Id=40A.

What package does the FDB8880 come in?

The FDB8880 is supplied in a surface mount TO-263-3 (D²Pak) package, also known as D²PAK (TO-263).

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the FDB8880 RoHS compliant?

The FDB8880 is listed as RoHS3 Compliant, though this data is unverified.

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