| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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8,000 pcs
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8000 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The FDB8880 is an N-Channel enhancement mode power MOSFET manufactured by ON Semiconductor. It features a maximum drain-source voltage of 30V and a continuous drain current rating of 11A at 25°C ambient temperature (54A at case temperature). The device offers a low on-resistance of 11.6 mOhm maximum at Vgs=10V and Id=40A, making it suitable for high-efficiency power switching applications.
This MOSFET utilizes Metal Oxide semiconductor technology and is designed for surface mount assembly. It is supplied in the TO-263-3 (D²Pak) package, also known as D²PAK (TO-263), which provides excellent thermal performance with a maximum power dissipation of 55W at case temperature. The device can operate over a junction temperature range of -55°C to 175°C.
Key electrical characteristics include a typical gate threshold voltage of 2.5V maximum at Id=250µA, a maximum gate charge of 29 nC at Vgs=10V, and an input capacitance of 1240 pF at Vds=15V. The recommended gate drive voltage range is 4.5V to 10V. These parameters make the FDB8880 well-suited for DC-DC converters, power management circuits, and motor control applications where efficient switching and low conduction losses are required.
The maximum drain-source voltage (Vdss) is 30V.
The maximum continuous drain current is 11A at 25°C ambient temperature (Ta) and 54A at case temperature (Tc).
The maximum drain-source on-resistance is 11.6 mOhm at Vgs=10V and Id=40A.
The FDB8880 is supplied in a surface mount TO-263-3 (D²Pak) package, also known as D²PAK (TO-263).
The operating junction temperature range is -55°C to 175°C.
The FDB8880 is listed as RoHS3 Compliant, though this data is unverified.