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FDB8870-F085 N-Channel PowerTrench MOSFET rated for 30V drain-source voltage and 160A continuous drain current. Features low on-resistance of 3.9mΩ at 10V and fast switching for DC/DC converter applications.
Mfr Part #:

FDB8870-F085

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel PowerTrench MOSFET rated for 30V drain-source voltage and 160A continuous drain current. Features low on-resistance of 3.9mΩ at 10V and fast switching for DC/DC converter applications.
✓ Total Stock: 783 pcs

FDB8870-F085 Available from 1 distributor

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FDB8870-F085 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id
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FDB8870-F085 Description

Short technical summary and product information.

The FDB8870-F085 is an N-Channel PowerTrench MOSFET from onsemi designed for high-efficiency DC/DC converters. It offers a drain-source breakdown voltage of 30V and a continuous drain current of 160A at Tc=25°C with Vgs=10V. The device features a low typical on-resistance of 3.2mΩ at 10V and 35A, with a maximum of 3.9mΩ. Gate threshold voltage ranges from 1.2V to 2.5V. The MOSFET is qualified to AEC-Q101 for automotive applications. It is housed in a surface-mount D²PAK (TO-263) package with gull wing leads, suitable for high-power density designs. The device supports a wide operating junction temperature range of -55°C to 175°C. Key dynamic characteristics include input capacitance of 5200pF and total gate charge of 106nC typical. The part is RoHS compliant and available in tape and reel packaging.

FDB8870-F085 Quick Information

Product Type: Power MOSFET
Series: F085
Canonical Name: N-Channel PowerTrench MOSFET, 30V, 160A, 3.9mΩ
Subcategory: N-Channel MOSFET

FDB8870-F085 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDB8870-F085 Features

  • Low on-resistance of 3.9mΩ at 10V.
  • High continuous drain current of 160A.
  • Qualified to AEC-Q101 automotive standard.
  • Fast switching with low gate charge.
  • Surface-mount D²PAK package for easy assembly.

FDB8870-F085 Applications

  • Ideal for DC/DC converter applications.
  • Used in synchronous and conventional PWM controllers.
  • Suitable for high-efficiency power supplies.
  • Automotive power management systems.

FDB8870-F085 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

30V minimum breakdown voltage.

What package is the FDB8870-F085 available in?

Surface-mount D²PAK (TO-263) package with 2 leads and tab.

What is the operating temperature range?

-55°C to 175°C junction temperature.

Is the FDB8870-F085 RoHS compliant?

Yes, it is RoHS3 compliant.

What is the maximum drain current?

160A continuous at Tc=25°C with Vgs=10V (package limited to 80A).

What is the gate threshold voltage?

1.2V minimum to 2.5V maximum at Id=250µA.

What is the on-resistance?

3.9mΩ maximum at Vgs=10V, Id=35A.

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