| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,405 pcs
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1405 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request | |
|
610 pcs
|
610 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
126 pcs
|
126 pcs | On Request | 1 | On Request | On Request | 1634+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDB8870 is an N-Channel enhancement-mode power MOSFET manufactured by ON Semiconductor. It features a drain-to-source voltage (Vdss) of 30 V and a maximum continuous drain current of 23 A at ambient temperature (Ta=25°C) and 160 A at case temperature (Tc=25°C). The device offers a low on-resistance of 3.9 mOhm maximum at Vgs=10V and Id=35A, enabling efficient power switching.
Gate drive voltage is specified at 4.5V and 10V, with a maximum gate threshold voltage of 2.5V at Id=250µA. The MOSFET can handle a maximum gate-to-source voltage of ±20V. Input capacitance is 5200 pF at Vds=15V, and total gate charge is 132 nC at Vgs=10V, providing moderate switching performance.
The device is housed in a surface-mount TO-263-3 (D²Pak) package with a supplier device package of D²PAK (TO-263). Maximum power dissipation is 160 W at Tc=25°C, and the operating junction temperature range is -55°C to 175°C. This MOSFET is suitable for high-current switching applications in power management and DC-DC converter circuits.
The maximum drain-to-source voltage (Vdss) is 30 V.
23 A at ambient temperature (Ta=25°C) and 160 A at case temperature (Tc=25°C).
Maximum on-resistance is 3.9 mOhm at Vgs=10V and Id=35A.
Surface mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB. Supplier device package is D²PAK (TO-263).
-55°C to 175°C (junction temperature).
RoHS3 Compliant (unverified).