FDB8832 N-Channel Power MOSFET from ON Semiconductor. Rated 30V drain-source, 80A continuous drain current at case temperature 25°C. Surface mount D2PAK (TO-263) package.
Mfr Part #:

FDB8832

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel Power MOSFET from ON Semiconductor. Rated 30V drain-source, 80A continuous drain current at case temperature 25°C. Surface mount D2PAK (TO-263) package.
Total Stock: 46,390 pcs
$ Price Range: $1.16

FDB8832 Available from 2 distributors

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Non-Authorised
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Non-Authorised Inventory information
46,387 pcs
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3 pcs
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FDB8832 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Continuous Drain Current (Nominal @ Tc=25 °C)
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDB8832 Description

Short technical summary and product information.

The FDB8832 is an N-Channel enhancement mode power MOSFET manufactured by ON Semiconductor. This device features a drain-source breakdown voltage of 30V and is capable of delivering continuous drain current of 34A at ambient temperature (25°C) and up to 80A at case temperature (25°C). The MOSFET is built with metal oxide semiconductor (MOSFET) technology.

 

Electrical characteristics include a maximum drain-source on-resistance of 1.9mOhm at Vgs=10V and Id=80A, a gate threshold voltage maximum of 3V at Id=250µA, and a total gate charge of 265nC at Vgs=10V. Input capacitance is 11400pF at Vds=15V. The device can dissipate up to 300W at case temperature 25°C and operates over a junction temperature range of -55°C to +175°C.

 

This MOSFET is packaged in a surface mount D2PAK (TO-263) case, also known as TO-263-3 or D2Pak (2 leads plus tab). The supplier device package is D2PAK (TO-263). It is suitable for high-efficiency power management and switching applications where low on-resistance and high current handling are required. The drive voltage for minimal and maximal Rds(on) is 4.5V and 10V, respectively, with a maximum gate-source voltage of ±20V.

FDB8832 Quick Information

Product Type: N-Channel Power MOSFET
Canonical Name: FDB8832 N-Channel MOSFET, 30V, 34A (Ta)/80A (Tc), D2PAK (TO-263)
Subcategory: N-Channel Power MOSFET

FDB8832 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDB8832 Estimated Pricing

Qty Low High
100+ $1.16 $1.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDB8832 Features

  • 30V drain-source breakdown voltage.
  • 80A continuous drain current at 25°C.
  • 1.9mOhm low on-resistance at 10V.
  • 265nC total gate charge at 10V.
  • 300W power dissipation at case 25°C.

FDB8832 Applications

  • High-efficiency DC-DC converter circuits.
  • Motor drive and power management systems.
  • Load switch and battery protection.
  • High-current switching for automotive modules.

FDB8832 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDB8832?

30V.

What is the maximum continuous drain current at 25°C case temperature?

80A.

What is the typical package of the FDB8832?

Surface mount D2PAK (TO-263) - also known as TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

What is the operating temperature range of this MOSFET?

-55°C to +175°C (junction temperature).

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