| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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16,000 pcs
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16000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FDB86566-F085 is an N-Channel power MOSFET from On Semiconductor, designed for high-current switching applications. With a maximum drain-source voltage of 60V and a continuous drain current of 110A, it offers low on-resistance of 2.7mOhm at 80A and 10V gate drive. The device features a gate charge of 110nC at 10V and input capacitance of 6655pF at 30V, making it suitable for efficient power conversion.
This MOSFET is housed in a surface mount D2PAK (TO-263) package, allowing for compact PCB layouts. It can operate over a junction temperature range of -55°C to 175°C and dissipates up to 176W. The maximum gate-source voltage is ±20V, and the threshold voltage is 4V at 250µA.
Typical applications include DC-DC converters, motor control, and power management in automotive and industrial systems. The device is available in tape and reel packaging for automated assembly.
The maximum drain-source voltage (Vdss) is 60V.
The device is available in a surface mount D2PAK (TO-263) package, specifically TO-263-3, D²Pak.
The operating junction temperature range is -55°C to 175°C.
The RoHS status is listed as RoHS3 Compliant but unverified.
The maximum continuous drain current is 110A at case temperature (Tc).
The maximum gate threshold voltage is 4V at 250µA drain current.
The maximum power dissipation is 176W.