| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,600 pcs
|
9600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDB86366-F085 is an N-Channel PowerTrench MOSFET manufactured by onsemi, designed for high-efficiency power management in automotive and industrial applications.
With a drain-to-source voltage rating of 80V and continuous drain current of 110A at 25°C case temperature, this device offers a low maximum on-resistance of 3.6mΩ at 80A and 10V gate drive. The gate threshold voltage is 4V maximum, and the gate-source voltage range is ±20V.
It features a total gate charge of 112nC and an input capacitance of 6280pF, enabling efficient switching in high-frequency circuits. The device is housed in a surface-mount D2-PAK (TO-263) package and is qualified to AEC Q101 for automotive applications.
Typical applications include automotive engine control units, powertrain management, solenoid and motor drivers, integrated starter/alternator systems, and primary switching for 12V systems. The part is RoHS compliant and supports unclamped inductive switching (UIS).
80V
110A at 25°C case temperature
3.6mΩ at 80A drain current and 10V gate-source voltage
112nC maximum at 10V gate-source voltage
Yes, the datasheet indicates it is RoHS compliant.
D2-PAK (TO-263) surface mount package
±20V