| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,073 pcs
|
3073 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDB86363-F085 is an N-Channel PowerTrench MOSFET from ON Semiconductor designed for high-efficiency power management applications. It is rated for a drain-to-source voltage of 80V and can handle a continuous drain current of 110A at a case temperature of 25°C.
This MOSFET features a maximum on-resistance (Rds on) of 2.4 mOhm at 80A and 10V gate drive, with a typical value of 2.0 mOhm. The total gate charge is typically 131 nC at 10V, enabling fast switching transitions. The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications such as engine control, power train management, and solenoid drivers.
The part is housed in a D²PAK (TO-263) surface-mount package with a maximum junction-to-case thermal resistance of 0.5°C/W and a power dissipation capability of 300W at 25°C case temperature. Operating temperature range is -55°C to 175°C.
The drain-to-source voltage (Vdss) is 80V.
The continuous drain current is 110A at a case temperature of 25°C.
It is available in a TO-263-3 D²Pak (2 leads + tab) surface-mount package, also known as D²PAK (TO-263).
The operating temperature range is -55°C to 175°C (junction temperature).
Yes, the device is RoHS3 compliant, Pb-Free and Halide Free, as stated in the datasheet.
The maximum gate-to-source voltage (Vgs) is ±20V.
The typical on-resistance is 2.0 mOhm at Id=80A and Vgs=10V.