DistyParts Icon
FDB86360-F085 N-Channel Power Trench MOSFET, 80V drain-source voltage, 110A continuous drain current, low on-resistance of 1.8mΩ max, in D2PAK surface mount package.
Mfr Part #:

FDB86360-F085

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel Power Trench MOSFET, 80V drain-source voltage, 110A continuous drain current, low on-resistance of 1.8mΩ max, in D2PAK surface mount package.
✓ Total Stock: 94 pcs

FDB86360-F085 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
94 pcs
On Request
94 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDB86360-F085 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id
View Similar Products (0)

FDB86360-F085 Description

Short technical summary and product information.

The FDB86360-F085 is an N-channel Power Trench MOSFET from onsemi, designed for high-efficiency power switching in automotive and industrial applications. It features a drain-source voltage rating of 80V and a continuous drain current of 110A at 25°C case temperature.

 

Key electrical characteristics include a typical on-resistance of 1.5 mΩ (1.8 mΩ max) at VGS=10V, ID=80A, and a total gate charge of 207 nC typical. The device is AEC Q101 qualified and RoHS compliant.

 

This MOSFET is housed in a D2PAK (TO-263) surface mount package, supporting standard tape and reel packaging with 800 units per reel. It operates over a junction temperature range of -55°C to +175°C, with a maximum power dissipation of 333W at 25°C case temperature.

FDB86360-F085 Quick Information

Product Type: N-Channel MOSFET
Series: FDB86360
Canonical Name: FDB86360-F085 N-Channel Power Trench MOSFET
Subcategory: N-Channel Power MOSFET

FDB86360-F085 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDB86360-F085 Features

  • 80V drain-source voltage rating.
  • 110A continuous drain current capability.
  • Low 1.5mΩ typical on-resistance.
  • AEC Q101 qualified for automotive.
  • Surface mount D2PAK package.

FDB86360-F085 Applications

  • Automotive engine control systems.
  • Powertrain management modules.
  • Solenoid and motor drivers.
  • Integrated starter/alternator circuits.
  • Primary switch for 12V systems.

FDB86360-F085 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDB86360-F085?

80V.

What package is the FDB86360-F085 available in?

TO-263-3, D2Pak (2 leads + tab), TO-263AB surface mount.

What is the operating temperature range of the FDB86360-F085?

-55°C to +175°C.

Is the FDB86360-F085 RoHS compliant?

Yes, RoHS compliant.

What is the typical on-resistance (RDS(on)) of the FDB86360-F085?

1.5 mΩ typical at VGS=10V, ID=80A.

What is the total gate charge of the FDB86360-F085?

207 nC typical at VGS=10V, VDD=40V, ID=80A.

Home
Account

Categories