| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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695 pcs
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695 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDB8453LZ is an N-Channel PowerTrench MOSFET from On Semiconductor, designed for high-efficiency power switching applications. It is rated for a maximum drain-to-source voltage of 40V and can handle a continuous drain current of 50A at the case temperature (Tc = 25°C). The device features a low maximum on-resistance of 7mΩ when driven with a 10V gate voltage, and 9mΩ at 4.5V, enabling efficient operation in low-voltage power conversion circuits.
This MOSFET is housed in a surface-mount D2PAK (TO-263) package with a gull wing lead style, suitable for automated assembly. It offers fast switching performance and includes ESD protection with a typical HBM rating of 7.6kV. The device is RoHS compliant and operates over a junction temperature range of -55°C to 150°C.
The maximum drain-source voltage (Vdss) is 40V.
The continuous drain current is 50A at a case temperature of 25°C, and 16.1A at an ambient temperature of 25°C.
The maximum on-resistance is 7mΩ at VGS=10V and ID=17.6A, and 9mΩ at VGS=4.5V and ID=14.9A.
It is available in a surface-mount D2PAK (TO-263) package.
The operating junction temperature range is -55°C to 150°C.
Yes, the datasheet states it is RoHS compliant.
The maximum gate charge (Qg) is 66nC at VGS=10V.